PNZ313B Panasonic - SSG, PNZ313B Datasheet
PNZ313B
Manufacturer Part Number
PNZ313B
Description
PIN PHOTO DIODE 960NM SIDE VIEW
Manufacturer
Panasonic - SSG
Type
Photodioder
Datasheet
1.PNZ313B.pdf
(3 pages)
Specifications of PNZ313B
Wavelength
960nm
Output Type
Current On Typ, 25µA
Package / Case
Side View
Lead Free Status / Rohs Status
Contains lead / RoHS non-compliant
Other names
PN313B
PN313B
Q1181157
PN313B
Q1181157
PIN Photodiodes
PNZ313B
Silicon planar type
For optical control systems
■ Features
■ Absolute Maximum Ratings
■ Electrical-Optical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• Fast response which is well suited to high speed modulated light
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
• Wide detection area, wide half-power angle: θ = 65° (typ.)
• Adoption of visible light cutoff resin
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Dark current
Photocurrent
Peak emission wavelength
Rise time
Fall time
Rise time
Fall time
Terminal capacitance
Half-power angle
detection: t
diodes: λ
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. * 1: Source: Tungsten (color temperature 2 856 K)
* 2: Switching time measurement circuit
λ
P
* 2
* 2
* 2
* 2
= 900 nm
p
Parameter
= 960 nm (typ.)
r
Parameter
* 1
, t
50 Ω
f
= 50 ns (typ.)
Sig. in
(PN313B)
V
R
CC
L
Sig. out
Symbol
Symbol
T
T
V
P
T
opr
stg
D
R
λ
I
I
C
a
t
t
t
t
θ
D
L
r
f
r
f
p
t
= 25°C
(Input pulse)
(Output pulse)
a
−40 to +100
−30 to +85
= 25°C ± 3°C
Rating
V
V
V
V
V
V
The angle from which photo-output
becomes 50%
100
Note) The part number in the parenthesis shows conventional part number.
R
R
R
R
R
R
30
= 10 V
= 10 V, L = 1 000 lx
= 10 V
= 10 V, R
= 10 V, R
= 10 V, f = 1 MHz
SHE00034BED
t
r
Conditions
L
L
Unit
mW
°C
°C
V
= 1 kΩ
= 100 kΩ
t
f
90%
10%
t
t
r
f
: Rise time
:
Fall time
1
Min
15
7.0
±0.5
2
LSTFR102NC-001 Package
5.08
Typ
960
2-1.2
2-0.6
25
50
50
70
65
5
5
Device
center
Anode mark (φ1.6)
±0.25
±0.15
±0.15
0.41
Max
±0.15
50
1: Anode
2: Cathode
Unit: mm
Unit
nA
µA
nm
µs
µs
pF
ns
ns
°
1
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PNZ313B Summary of contents
Page 1
... PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems ■ Features • Fast response which is well suited to high speed modulated light = 50 ns (typ.) detection • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting diodes: λ ...
Page 2
... PNZ313B 120 100 − °C ) Ambient temperature T a ∆I 160 = 000 856 K 120 − °C ) Ambient temperature T a 100 −2 − Reverse voltage V ( 25° 856 − 100 Illuminance Spectral sensitivity characteristics 100 = 25° 600 700 800 900 1 000 Wavelength λ ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...