QSE113E3R0 Fairchild Optoelectronics Group, QSE113E3R0 Datasheet

PHOTOTRANSISTOR IR 30V SIDELOOK

QSE113E3R0

Manufacturer Part Number
QSE113E3R0
Description
PHOTOTRANSISTOR IR 30V SIDELOOK
Manufacturer
Fairchild Optoelectronics Group
Series
-r
Datasheet
1.QSE113.pdf (4 pages)

Specifications of QSE113E3R0

Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
-
Current - Dark (id) (max)
100nA
Wavelength
880nm
Viewing Angle
50°
Power - Max
100mW
Mounting Type
Through Hole
Orientation
Side View
Package / Case
Radial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
QSE113E3R0
QSE113E3R0TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
QSE113E3R0
Manufacturer:
EPCOS
Quantity:
207
DESCRIPTION
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
• NPN silicon phototransistor
• Package type: Sidelooker
• Medium wide reception angle, 50°
• Package material and color: black epoxy
• Matched emitter: QEE113
• Daylight filter
• High sensitivity
© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
Ø 0.095 (2.41)
0.050 (1.27)
0.030 (0.76)
PACKAGE DIMENSIONS
0.087 (2.22)
EMITTER
0.100 (2.54)
NOM
0.020 (0.51) SQ.
0.100 (2.54)
(2X)
COLLECTOR
0.175 (4.44)
Ø 0.065 (1.65)
0.500 (12.70)
INFRARED PHOTOTRANSISTOR
0.200 (5.08)
MIN
Page 1 of 4
PLASTIC SILICON
QSE113
SCHEMATIC
Collector
Emitter
QSE114
5/1/02

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QSE113E3R0 Summary of contents

Page 1

PACKAGE DIMENSIONS 0.087 (2.22) 0.050 (1.27) Ø 0.095 (2.41) EMITTER 0.030 (0.76) 0.100 (2.54) NOM NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The ...

Page 2

ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature (2,3,4) Soldering Temperature (Iron) (2,3) Soldering Temperature (Flow) Collector Emitter Voltage Emitter Collector Voltage (1) Power Dissipation NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. ...

Page 3

Figure 1. Light Current vs. Radiant Intensity GaAs Light Source 0 Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage ...

Page 4

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT ...

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