USBQNM50412CE3/TR7 Microsemi Commercial Components Group, USBQNM50412CE3/TR7 Datasheet
USBQNM50412CE3/TR7
Manufacturer Part Number
USBQNM50412CE3/TR7
Description
TVS DIODE 12V 500W 1CH BI QFN
Manufacturer
Microsemi Commercial Components Group
Series
-r
Datasheet
1.USBQNM50405CE3TR7.pdf
(3 pages)
Specifications of USBQNM50412CE3/TR7
Voltage - Reverse Standoff (typ)
12V
Voltage - Breakdown
13.3V
Power (watts)
500W
Polarization
Bidirectional
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
USBQNM50412CE3/TR7
USBQNM50412CE3/TR7TR
USBQNM50412CE3/TR7TR
Copyright 2011
February Rev A
Main product characteristics
with the SOT-143 package. The configuration gives protection to 1 bi-directional data or interface line. It is designed for
use in applications where protection is required at the board level from voltage transients caused by electrostatic
discharge (ESD) as defined in IEC 61000-4-2 (±30kV), electrical fast transients (EFT) per IEC 61000-4-4 (±8kV) and
effects of secondary lightning.
protection of sensitive circuitry consisting of TTL, CMOS, DRAMs, SRAMs, HCMOS, HSIC microprocessors,
UNIVERSAL SERIAL BUS (USB) and I/O transceivers. The USBQNM504xxC product provides board level protection
from static electricity and other induced voltage surges that can damage or upset sensitive circuitry. This particular
device is aimed specifically at MRI application due to the absence of ferrous elements in the metal lead frame.
Electrical characteristics
Absolute maximum ratings
(1)
Features
USBQNM50403Ce3
USBQNM50405Ce3
USBQNM50412Ce3
USBQNM50415Ce3
USBQNM50424Ce3
All ratings at 25ºC unless specified otherwise
Description and applications
PART NUMBER
V
This Transient Voltage Suppressor (TVS) is assembled in a QFN143 package which is compatible (pin for pin)
These TVS arrays have a peak power rating of 500 watts for an 8/20 µs pulse (figure 1). This array is suitable for
-
-
-
-
-
BR(min)
Symbol
Protects 1 bi-directional line
Surge protection per IEC 61000-4-2 & IEC 61000-4-4
Ultralow capacitance (3pF per line pair)
Ultralow leakage
Use of C7025 non-magnetic alloy
T
P
P
C
T
STG
V
PP
RR
P
J
MAX
WM
/ V
PP
BR(max)
MARKING
DEVICE
N03C
N05C
N12C
N15C
N24C
3.3V – 24.0V
4.0V / 26.7V
STAND OFF
VOLTAGE,
Peak Pulse Power (using 8/20µs pulse)
V
500W
Max
12.0
15.0
24.0
WM
3.3
5.0
3pF
(V)
Junction temperature
Storage temperature
Pulse repetition rate
V
BREAKDOWN
www.Microsemi.com
BR
VOLTAGE,
Parameter
(V) @ 1mA
(1)
13.3
16.7
26.7
Min
4.0
6.0
USBQNM50403C to USBQNM50424C
(see figure 2)
V
CLAMPING
VOLTAGE,
CL
RoHS
MAGNETIC
COMPLIANT
HALOGEN
FOR MRI
(V) @ 1A
FREE
Max
10.8
19.0
24.0
43.0
8.0
NON
(see figure 2)
V
CLAMPING
VOLTAGE,
CL
Max
(V) @ 5A
11
12
26
32
57
500W, Bi-directional TVS array
Applications
- EIA RS485 data rates : 5Mbps
- 10 Base-T ethernet
- USB data rate 900Mbps
- MRI applications
I
D
CURRENT,
STANDBY
(µA) @ V
Max
200
40
1
1
1
-55 to +150
-55 to +125
WM
Value
0.01
500
QFN-143
CAPACITANCE,
@ 0V & 1MHz
C (pF)
Max
3
3
3
3
3
COEFFICIENT of
TEMPERATURE
Unit
ºC
ºC
W
%
V
(mV/°C)
BR
Max
,
11
28
-5
1
8
VBR
1/3
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USBQNM50412CE3/TR7 Summary of contents
Page 1
Main product characteristics V 3.3V – 24. 4.0V / 26.7V BR(min) BR(max) C MAX P PP Description and applications This Transient Voltage Suppressor (TVS) is assembled in a QFN143 package which is compatible (pin for pin) ...
Page 2
Figure 1 Graph of peak pulse power vs pulse time Circuit schematic Seen from above Copyright 2011 February Rev A USBQNM50403C to USBQNM50424C 500W (8/20µs) 10 100 1000 Pulse time (µs) Marking and ...
Page 3
Package dimensions Footprint dimensions Ordering information Product order code USBQNM504xxCe3/TR7 Commercial Business Unit Commercial Business Unit Microsemi Corporation Microsemi Corporation Microsemi Commercial Offshore de Macau Limitada Microsemi Commercial Offshore de Macau Limitada Avenida Doutor Mario Soares Avenida Doutor Mario Soares ...