ADG709BRU-REEL7 Analog Devices Inc, ADG709BRU-REEL7 Datasheet - Page 5

• Manufacturer Part Number: ADG709BRU-REEL7
• Description: IC MULTIPLEXER DUAL 4X1 16TSSOP
• Manufacturer: Analog Devices Inc

Specifications of ADG709BRU-REEL7

• Rohs Status: RoHS non-compliant
• Function: Multiplexer
• Circuit: 2 x 4:1
• On-state Resistance: 4.5 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V, ±2.5 V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Other names: ADG709BRU-REEL7; ADG709BRU-REEL7TR

V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Break-Before-Make Time
Analog Signal Range
On Resistance (R
On Resistance Match Between
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
Digital Input Capacitance, C
t
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
TRANSITION
ON
OFF
= 3 V ± 10%, V
Channels (ΔR
Delay, t
I
INL
(EN)
(EN)
or I
INH
OPEN
ON
ON
)
SS
)
D
= 0 V, GND = 0 V, unless otherwise noted.
INL
S
(Off )
D
INH
(Off )
, I
S
(On)
1
IN
+25°C
8
11
0.4
±0.01
±0.01
±0.01
0.005
2
18
8
18
8
±3
−60
−80
−60
−80
55
12
1.2
±20
±20
±20
30
1
30
15
−40°C to
B Version
+85°C
0 V to
V
14
2
±20
±20
±20
2.0
0.8
±0.1
30
1
30
15
−40°C to
+125°C
DD
Rev. C | Page 5 of 20
+25°C
8
11
0.4
±0.01
±0.1
±0.01
±0.1
±0.01
±0.1
0.005
2
18
8
18
8
±3
−60
−80
−60
−80
55
−40°C to
+85°C
12
1.2
±0.3
±0.75
±0.75
30
1
30
15
C Version
0.8
−40°C to
+125°C
0 V to
V
14
2
±1
±6
±6
2.0
±0.1
30
1
30
15
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
ADG708/ADG709
Test Conditions/
Comments
V
see Figure 20
V
I
V
V
see Figure 21
V
see Figure 22
V
see Figure 23
V
R
see Figure 24
V
R
V
R
V
R
V
V
C
R
f = 10 MHz
R
f = 1 MHz; see Figure 28
R
f = 10 MHz
R
f = 1 MHz; see Figure 29
R
see Figure 30
DS
S
S
DD
S
S
S
IN
L
S1
L
S
L
S
L
S
S
L
L
L
L
L
L
= 0 V to V
= 3 V/1 V, V
= 3 V/1 V, V
= 1 nF; see Figure 27
= 0 V to V
= V
= 300 Ω, C
= 300 Ω, C
= 2 V; see Figure 25
= 300 Ω, C
= 2 V; see Figure 26
= 300 Ω, C
= 2 V; see Figure 26
= 1.5 V, R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 10 mA
= 2 V/0 V, V
= V
= 3.3 V
D
INL
= 1 V or 3 V;
or V
DD
S
L
L
L
L
L
DD
D
D
INH
= 0 Ω,
= 5 pF,
= 5 pF,
= 5 pF,
= 5 pF,
= 5 pF;
L
L
L
L
, I
S2
,
= 35 pF;
= 35 pF
= 35 pF
= 35 pF
= 1 V/3 V;
= 1 V/3 V;
DS
= 0 V/2 V
= 10 mA;