ADG704BRMZ Analog Devices Inc, ADG704BRMZ Datasheet - Page 4

• Manufacturer Part Number: ADG704BRMZ
• Description: IC MULTIPLEXER 4X1 10MSOP
• Manufacturer: Analog Devices Inc

Specifications of ADG704BRMZ

• Function: Multiplexer
• Circuit: 1 x 4:1
• On-state Resistance: 4 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• No. Of Circuits: 1
• Supply Current: 1nA
• On State Resistance Max: 2.5ohm
• Supply Voltage Range: 1.8V To 5.5V
• Operating Temperature Range: -40°C To +85°C
• Analog Switch Case Style: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADG704
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG704 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
(T
V
Analog, Digital Inputs
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . . –65 C to +150 C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150 C
Lead Temperature, Soldering
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
2
Model
ADG704BRM
NOTES
1
2
Stresses above those listed under Absolute Maximum Ratings may cause perma-
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
Brand = Due to small package size, these three characters represent the part
number.
RM = SOIC.
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
limited to the maximum ratings given.
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
DD
Industrial (B Version) . . . . . . . . . . . . . . . . . –40 C to +85 C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215 C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220 C
A
JA
= +25 C unless otherwise noted)
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206 C/W
PIN CONFIGURATION
Temperature
Range
–40 C to +85 C
GND
ORDERING GUIDE
EN
A0
S1
S3
2
(10-Lead SOIC)
(Pulsed at 1 ms, 10% Duty Cycle Max)
. . . . . . . . . . . –0.3 V to V
1
2
3
4
5
(Not to Scale)
TOP VIEW
ADG704
30 mA, Whichever Occurs First
10
1
9
8
7
6
A1
S2
D
S4
V
DD
Brand
S9B
1
DD
+0.3 V or
Package
Option
RM-10
2
–4–
TERMINOLOGY
V
GND
S
D
A0, A1
EN
R
R
I
I
I
V
C
C
C
t
t
t
Crosstalk
Off Isolation
Charge
Injection
Bandwidth
On Response
On Loss
D
S
D
ON
OFF
D
R
DD
D
ON
FLAT(ON)
S
D
D
, I
(OFF)
(OFF)
ON
(OFF)
, C
(V
(OFF)
S
S
(ON)
A1
X
0
0
1
1
S
)
(ON)
Most positive power supply potential.
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control inputs.
Logic control input.
Ohmic resistance between D and S.
On resistance match between any two chan-
nels i.e., R
Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
Drain leakage current with the switch “OFF.”
Source leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
The frequency at which the output is attenu-
ated by –3 dBs.
The frequency response of the “ON” switch.
The voltage drop across the “ON” switch,
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from 0 dB
at very low frequencies.
Table I. Truth Table
A0
X
0
1
0
1
ON
max–R
WARNING!
EN
0
1
1
1
1
ON
min.
ESD SENSITIVE DEVICE
ON Switch
NONE
1
2
3
4
REV. A