IRG4BC40WHR International Rectifier, IRG4BC40WHR Datasheet

IRG4BC40WHR

Manufacturer Part Number

IRG4BC40WHR

Description

Manufacturer

International Rectifier

Datasheet

1.IRG4BC40WHR.pdf (9 pages)

Specifications of IRG4BC40WHR

Channel Type

Configuration

Single

Collector-emitter Voltage

600V

Collector Current (dc) (max)

40A

Gate To Emitter Voltage (max)

±20V

Package Type

TO-220AB

Pin Count

3 +Tab

Mounting

Through Hole

Operating Temperature (min)

-55

Operating Temperature (max)

150C

Operating Temperature Classification

Military

Lead Free Status / Rohs Status

Not Compliant

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INSULATED GATE BIPOLAR TRANSISTOR

Benefits

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Features

• Lower switching losses allow more cost-effective

• Of particular benefit to single-ended converters and

• Low conduction losses and minimal minority-carrier

• Designed expressly for Switch-Mode Power

• Industry-benchmark switching losses improve

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

boost PFC topologies 150W and higher

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

Supply and PFC (power factor correction)

applications

efficiency of all power supply topologies

tighter parameters distribution, exceptional reliability

ARV

STG

CES

@ T

= 25°C

= 100°C

= 25°C

= 100°C

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current Q

Clamped Inductive Load Current R

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy S

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Parameter

n-channel

300 (0.063 in. (1.6mm) from case )

2.0 (0.07)

Typ.

–––

0.5

10 lbf•in (1.1N•m)

IRG4BC40W

-55 to + 150

TO-220AB

Max.

± 20

600

160

CE(on) typ.

Max.

0.77

–––

CES

PD - 91654A

= 15V, I

= 600V

4/24/2000

2.05V

Units

= 20A

Units

g (oz)

°C/W

°C

Related parts for IRG4BC40WHR

IRG4BC40WHR Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • ...

Page 2

IRG4BC40W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

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IRG4BC40WHR datasheet download

IRG4BC40WHR International Rectifier, IRG4BC40WHR Datasheet

IRG4BC40WHR

Specifications of IRG4BC40WHR

Related parts for IRG4BC40WHR

IRG4BC40WHR Summary of contents

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