IRG4BC40WHR

Manufacturer Part NumberIRG4BC40WHR
ManufacturerInternational Rectifier
IRG4BC40WHR datasheet
 


Specifications of IRG4BC40WHR

Channel TypeNConfigurationSingle
Collector-emitter Voltage600VCollector Current (dc) (max)40A
Gate To Emitter Voltage (max)±20VPackage TypeTO-220AB
Pin Count3 +TabMountingThrough Hole
Operating Temperature (min)-55Operating Temperature (max)150C
Operating Temperature ClassificationMilitaryLead Free Status / Rohs StatusNot Compliant
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INSULATED GATE BIPOLAR TRANSISTOR
Features
Features
Features
Features
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Wt
Weight
www.irf.com
PD - 91654A
IRG4BC40W
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-220AB
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.77
0.5
–––
–––
80
2.0 (0.07)
–––
= 600V
2.05V
= 20A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
4/24/2000

IRG4BC40WHR Summary of contents

  • Page 1

    INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • ...

  • Page 2

    IRG4BC40W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

  • Page 3

    ave : ...

  • Page 4

    IRG4BC40W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 ...

  • Page 5

    1MHz ies res oes ce gc 3000  C ies 2000  C oes 1000 ...

  • Page 6

    IRG4BC40W  2 10Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching ...

  • Page 7

    L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

  • Page 8

    IRG4BC40W Case Outline and Dimensions — TO-220AB (. 2 2 (.255) 6 ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...