AUIRF7319Q International Rectifier, AUIRF7319Q Datasheet

AUIRF7319Q

Manufacturer Part Number

AUIRF7319Q

Description

58T1283

Manufacturer

International Rectifier

Datasheet

1.AUIRF7319QTR.pdf (13 pages)

Specifications of AUIRF7319Q

Module Configuration

Dual

Transistor Polarity

N And P Channel

Continuous Drain Current Id

6.5A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

0.029ohm

Rds(on) Test Voltage Vgs

10V

Rohs Compliant

Yes

Resistance Drain-source Rds (on)

46 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

6.5 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Gate Charge Qg

22 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7319QPBF

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7319QTRPBF

Manufacturer:

Quantity:

20 000

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Features

Description

Specifically designed for Automotive applications, these

HEXFET

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a 150°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine

to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it ideal

in a variety of power applications. This dual, surface mount

SO-8 can dramatically reduce board space and is also available

in Tape & Reel.

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Thermal Resistance

STG

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Fully Avalanche Rated

Automotive [Q101] Qualified*

Lead-Free, RoHS Compliant

= 25°C

= 70°C

= 25°C

= 70°C

is a registered trademark of International Rectifier.

Power MOSFET's in a Dual SO-8 package utilize

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Continuous Source Current( diode Conduction)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Power Dissipation

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE MOSFET

@ 10V

Gate

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

N-Channel

Typ.

–––

6.5

5.2

2.5

4.0

5.0

Drain

-55 to + 150

SO-8

Max.

0.20

± 20

2.0

1.3

(BR)DSS

DS(on)

P-Channel

Max.

Source

62.5

-4.9

-3.9

-2.5

140

-2.8

-5.0

-30

typ.

max. 0.029 Ω 0.058 Ω

N-Ch

30V

0.023Ω 0.042Ω

6.5A

PD - 96364B

Units

°C/W

V/ns

°C

P-Ch

-4.9A

-30V

Related parts for AUIRF7319Q

AUIRF7319Q Summary of contents

Page 1

... Gate-to-Source Voltage GS dv/dt Peak Diode Recovery dv/dt T Operating Junction and J T Storage Temperature Range STG Thermal Resistance R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE MOSFET N-CHANNEL MOSFET P-CHANNEL MOSFET Top View G ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com † ...

Page 4

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 20μs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150° ...

Page 5

1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.12 0.10 0.08 0. 0.04 0.02 0. Gate-to-Source Voltage (V) GS www.irf.com ...

Page 6

iss rss oss ds 900 C iss C oss 600 C 300 rss Drain-to-Source Voltage ...

Page 7

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3. 0 Drain-to-Source Voltage (V) DS 100 T = 25° 3.0 3.5 4.0 -V ...

Page 8

1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.16 0.12 0.08 0.04 0. 10V ...

Page 9

GS 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS 100 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 www.irf.com A ...

Page 10

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. ...

Page 11

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

Page 12

... Ordering Information Base part Package Type AUIRF7319Q SO-8 12 Standard Pack Complete Part Number Form Quantity Tube 95 Tape and Reel 4000 AUIRF7319Q AUIRF7319QTR www.irf.com ...

Page 13

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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