AUIRLZ44Z International Rectifier, AUIRLZ44Z Datasheet

54T9019

AUIRLZ44Z

Manufacturer Part Number
AUIRLZ44Z
Description
54T9019
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRLZ44Z

Transistor Polarity
N Channel
Continuous Drain Current Id
51A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.011ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
80W
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
22.5 mOhms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
51 A
Power Dissipation
80 W
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
24 nC
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLZ44Z
Manufacturer:
IR
Quantity:
12 500
Features
www.irf.com
HEXFET
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS(Thermally Limited)
AS
AR
JC
CS
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
(tested )
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
i
Ã
AUTOMOTIVE GRADE
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
d
G
h
Gate
G
D
S
V
R
I
D
(BR)DSS
DS(on)
HEXFET
D
See Fig.12a, 12b, 15, 16
AUIRLZ44Z
AUIRLZ44Z
Typ.
TO-220AB
Drain
0.50
–––
–––
10 lbf
D
-55 to + 175
max. 13.5m
typ.
y
®
Max.
in (1.1N
0.53
300
204
± 16
110
51
36
80
78
G
Power MOSFET
D
S
y
Max.
1.87
m)
–––
62
11m
PD - 97682
Source
55V
51A
S
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRLZ44Z Summary of contents

Page 1

... JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE AUIRLZ44Z HEXFET V D (BR)DSS R DS(on TO-220AB AUIRLZ44Z G Gate Parameter @ 10V GS @ 10V See Fig.12a, 12b, 15 Parameter Typ 97682 ® Power MOSFET 55V typ. 11m max. 13.5m ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com Automotive † ...

Page 4

TOP 100 BOTTOM 10 3.0V 1 60μs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 175°C 10.0 V ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = Ciss 1500 1000 500 Coss ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 31A ...

Page 9

G SD Fig 17. HEXFET Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform SD ...

Page 10

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com ...

Page 11

... Ordering Information Base part Package Type number AUIRLZ44Z TO-220 www.irf.com Standard Pack Complete Part Number Form Quantity Tube 50 AUIRLZ44Z 11 ...

Page 12

12 www.irf.com ...

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