NLAS44599DTR2 ON Semiconductor, NLAS44599DTR2 Datasheet

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NLAS44599DTR2

Manufacturer Part Number
NLAS44599DTR2
Description
IC SWITCH DUAL DPDT 16TSSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NLAS44599DTR2

Function
Switch
Circuit
2 x DPDT
On-state Resistance
30 Ohm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
2 V ~ 5.5 V
Current - Supply
4µA
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NLAS44599DTR2OSTR

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NLAS44599
Low Voltage Single Supply
Dual DPDT Analog Switch
pole−double throw (DPDT) analog switch fabricated with silicon
gate CMOS technology. It achieves high speed propagation delays
and low ON resistances while maintaining CMOS low power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from V
lower and more linear over input voltage than R
analog switches.
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 14
The NLAS44599 is an advanced dual−independent CMOS double
The device has been designed so the ON resistance (R
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
The NLAS44599 can also be used as a quad 2−to−1 multiplexer−
Channel Select Input Over−Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: I
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Chip Complexity: 158 FETs
Pb−Free Packages are Available
Machine Model; > 200 V
CC
= 2 mA (Max) at T
ON
CC
A
of typical CMOS
to GND).
= 25°C
ON
) is much
1
*Previous releases of this device may be marked as
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
16
shown in this diagram.
CASE 485G
MN SUFFIX
QFN−16
CASE 948F
DT SUFFIX
TSSOP−16
ORDERING INFORMATION
A
L
Y
W
1
http://onsemi.com
1
16
Part Marking
= Assembly Location
= Wafer Lot
= Year
= Work Week
Current
ALYW
4459
AS
Publication Order Number:
DIAGRAMS
MARKING
16
1
1
Part Marking*
NLAS44599/D
ALYW
NLAS
4459
16
Previous
ALYW
C

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NLAS44599DTR2 Summary of contents

Page 1

NLAS44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAS44599 is an advanced dual−independent CMOS double pole−double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining ...

Page 2

QFN−16 PACKAGE SAB See TSSOP−16 Switch Configuration COM TSSOP−16 PACKAGE COM SELECT ...

Page 3

MAXIMUM RATINGS Symbol V Positive DC Supply Voltage CC V Analog Input Voltage ( Digital Select Input Voltage Current, Into or Out of Any Pin IK P Power Dissipation in Still Air ...

Page 4

DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Symbol Parameter V Minimum High−Level Input IH Voltage, Select Inputs V Maximum Low−Level Input IL Voltage, Select Inputs I Maximum Input Leakage IN Current I Power Off Leakage Current, OFF Select ...

Page 5

AC ELECTRICAL CHARACTERISTICS Symbol Parameter t Turn−On Time ON (Figures 12 and 13) t Turn−Off Time OFF (Figures 12 and 13) t Minimum Break−Before−Make BBM Time C Maximum Input Capacitance, Select Input Analog I/O (switch off) ...

Page 6

DUT V Output CC 0.1 mF 300 W Switch Select Pin DUT V Output CC 0.1 mF Open Input DUT Output Open Input V CC Input GND V OUT 35 pF Output GND Figure 4. t (Time Break−Before−Make) BBM V ...

Page 7

W Generator Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth switch. V ISO V = Off Channel Isolation = 20 Log ISO V = ...

Page 8

Off Isolation −60 −80 −100 0.01 0.1 1 FREQUENCY (MHz) Figure 10. Off−Channel Isolation (ns (ns) 5 OFF 0 2.5 3 3.5 V (VOLTS) CC Figure 12. t and ...

Page 9

0.001 0.0001 0.00001 −40 − Temperature (°C) Figure 16. I vs. Temp 100 125°C ...

Page 10

... IS Figure 22. R vs. Temp DEVICE ORDERING INFORMATION Circuit Indicator Technology Device NLAS44599DT NL NLAS44599DTR2 NL NLAS44599MN NL NLAS44599MNG NL NLAS44599MNR2 NL NLAS44599MNR2G NL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. ...

Page 11

D Î Î Î PIN 1 Î Î Î LOCATION 0.15 C TOP VIEW 0.15 C DETAIL B (A3) 0. 0.08 C SIDE VIEW D2 DETAIL 16X 5 8 EXPOSED PAD NOTE 5 4 ...

Page 12

... −V− C 0.10 (0.004) −T− SEATING D PLANE 16X 0.36 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE Ï Ï Ï ...

Page 13

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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