MCH6321-TL-E ON Semiconductor, MCH6321-TL-E Datasheet

MCH6321-TL-E

Manufacturer Part Number

MCH6321-TL-E

Description

MOSFET Power SWITCHING DEVICE

Manufacturer

ON Semiconductor

Datasheet

1.MCH6321-TL-E.pdf (4 pages)

Specifications of MCH6321-TL-E

Lead Free Status / Rohs Status

Details

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Ordering number : ENA0963

MCH6321

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : JV

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

1.8V drive

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Symbol

V GSS

V DSS

⏐ yfs ⏐

I DSS

I GSS

Tstg

I DP

Tch

P D

I D

SANYO Semiconductors

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm

I D =- -1mA, V GS =0V

V DS =- -20V, V GS =0V

V GS =±8V, V DS =0V

V DS =- -10V, I D =- -1mA

V DS =- -10V, I D =- -2A

I D =- -2A, V GS =- -4.5V

I D =- -1A, V GS =- -2.5V

I D =- -0.2A, V GS =- -1.8V

MCH6321

Conditions

✕0.8mm)

DATA SHEET

N1407PE TI IM TC-00001027

min

--0.4

--20

2.5

Ratings

typ

Ratings

130

4.3

Continued on next page.

--55 to +150

max

±10

150

--1.3

--20

--16

±10

125

200

1.5

--4

No. A0963-1/4

--1

Unit

mΩ

µA

°C

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