LX5530LQ MICROSEMI, LX5530LQ Datasheet

LX5530LQ

Manufacturer Part Number
LX5530LQ
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of LX5530LQ

Manufacturer's Type
Power Amplifier
Number Of Channels
1
Supply Current
250mA
Frequency (max)
5.9GHz
Operating Supply Voltage (min)
3V
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5V
Package Type
MLPQ EP
Mounting
Surface Mount
Pin Count
16
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LX5530LQ-TR
Manufacturer:
MICROSEM
Quantity:
20 000
Part Number:
LX5530LQTR
Manufacturer:
ACES
Quantity:
3 469
Copyright © 2000
Rev. 1.0a, 2006-09-12
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9 – 5.9
GHz frequency range.
implemented as a three-stage monolithic
microwave integrated circuit (MMIC)
with
matching and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(MOCVD). It operates with a single
positive voltage supply of 3 – 5V,
with high power gain of up to 33dB.
When operated at 5V supply voltage,
it provides up to +25dBm linear
output power for 802.11a OFDM
spectrum mask compliance, and low
EVM of 3% for up to +23dBm output
power in the 4.9-5.9GHz band.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
The LX5530 is a power amplifier
active
TM
RF
RF
Input
Input
(HBT)
bias,
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
3 X 3 M M M L P P A C K A G E
on-chip
IC
608Y
MSC
5530
Active Bias Network
Active Bias Network
The PA is
B L O C K D I A G R A M
D E S C R I P T I O N
process
input
Vc
Vc
Vref
Vref
power detector at the output port of the
PA to help reduce BOM cost and PCB
space for implementation of power
control in a typical wireless system. The
power detector is integrated with a
temperature-compensated bias network
and provides very stable response
across a wide range of output power
levels, over temperature extremes from
-40 to +85°C.
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability makes the
LX5530
broadband, high-gain power amplifier
requirements for IEEE 802.11a, and
Hiperlan2 portable WLAN, as well as
the
applications.
The LX5530 also features an on-chip
The LX5530 is available in a 16-pin
Integrated Products Division
emerging
®
an
Microsemi
http://www.microsemi.com
Det
Det
ideal
RF
RF
Output
Output
802.16
InGaP HBT 4.5 – 6.0GHz Power Amplifier
LQ
Note: Available in Tape & Reel. Append the letters
P A C K A G E O R D E R I N F O
“TR” to the part number. (i.e. LX5530LQ-TR)
solution
Plastic MLPQ
16 pin
WiMAX
RoHS Compliant / Pb-free
P
LX5530LQ
for
RODUCTION
Broadband 4.9 – 5.9GHz
Operation
Advanced InGaP HBT
Single-Polarity 3 – 5V Supply
Power Gain up to ~ 33dB for
V
Power Gain > ~28dB across 4.9-
5.85GHz
OFDM Mask Compliance Power
Pout ~ +25dBm over 4.9-
5.85GHz (ACPR ~ -50dBc @
±30MHz Offset)
Pout up to +23dBm with EVM
~3% (V
EVM < ~2.5% for
Pout=+21dBm across 4.9-
5.85GHz (V
EVM < ~2.5% for
Pout=+19dBm across 4.9-
5.85GHz (V
Total Current ~250mA for Pout =
+20dBm, Duty Cycle = 99%
(V
Complete On-Chip Input Match
Simple Output Match for Optimal
Broadband EVM
On-Chip RF Decoupling
Temperature-Compensated On-
Chip Output Power Detector
with Wide Dynamic Range
Small Footprint: 3x3mm
Low Profile: 0.9mm
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
IEEE 802.16 WiMAX
D
C
ATA
C
K E Y F E A T U R E S
=5V, Icq = 250mA
= 4V)
A P P L I C A T I O N S
S
C
= 5V)
HEET
C
C
= 5V)
= 4V)
LX5530
Page 1

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LX5530LQ Summary of contents

Page 1

... Vref Vref Det Det Plastic MLPQ LQ 16 pin RoHS Compliant / Pb-free LX5530LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5530LQ-TR) Microsemi Integrated Products Division LX5530 D S RODUCTION ATA HEET Broadband 4.9 – 5.9GHz Operation Advanced InGaP HBT Single-Polarity 3 – ...

Page 2

... TM Thank you for your interest in Microsemi The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: IPGdatasheets@microsemi ...

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