LX5501BSE MICROSEMI, LX5501BSE Datasheet

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LX5501BSE

Manufacturer Part Number
LX5501BSE
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of LX5501BSE

Manufacturer's Type
Cascadable Amplifier
Number Of Channels
1
Supply Current
100mA
Frequency (max)
6GHz
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (typ)
3/5V
Operating Supply Voltage (max)
6V
Package Type
SOT-23
Mounting
Surface Mount
Pin Count
5
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Copyright © 2000
Rev. 1.0, 2004-01-06
The
broadband RFIC amplifier that has
been
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process (MOCVD).
• Input and output matched to 50 ohms for ease of cascading.
• Cascaded gain blocks can be individually biased for the lowest supply current.
LX5501B
TM
manufactured
is
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
a
with
low
D E S C R I P T I O N
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5501BSE-TR)
-40 to +85°C
cost,
an
Designed as an easily cascadable 50-
ohm internally matched gain block, the
LX5501B can be used for IF and RF
amplification in wireless / wired voice
and data communication products and
broadband test equipment operating up
to 6 GHz.
The amplifier is available in a plastic 5-
lead SOT-23 package.
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
Integrated Products Division
SE
RoHS Compliant / Pb-free Transition DC: 0503
®
Microsemi
Plastic SOT-23
5 pin
LX5501BSE
InGAP HBT Gain Block
P
RODUCTION
Advanced InGaP HBT
DC to 6 GHz Operation
Single Supply
Low Idle Current (10 - 35 mA)
Small Signal Gain ~ 9 dB at 6
GHz
P1dB ~ 8 dBm at 6 GHz
SOT-23 Package
PA driver for WLAN and
Cordless Phones
VCO buffer
Low Current, High Gain
Cascaded Amplifiers
D
ATA
K E Y F E A T U R E S
A P P L I C A T I O N S
S
HEET
LX5501B
Page 1

Related parts for LX5501BSE

LX5501BSE Summary of contents

Page 1

... Cascaded gain blocks can be individually biased for the lowest supply current. -40 to +85°C Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5501BSE-TR) Copyright © 2000 Rev. 1.0, 2004-01-06 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 InGAP HBT Gain Block ® ...

Page 2

... Description Symbol Test Conditions S21 Frequency = 6 GHz P1dB Frequency = 6 GHz S11 Frequency = 4.9-6 GHz S22 Frequency = 4.9-6 GHz S12 Frequency = 4.9-6 GHz Frequency = 6 GHz, Pout = P1dB Icq Microsemi Integrated Products Division LX5501B RODUCTION ATA HEET Output GND 1 5 GND 2 GND RF Input ...

Page 3

... RF choke (0402 ohms Bias setting resistor (0402) EXT Vcc 2.85V Supply Voltage 2.8 3.2 2.65 2.75 2.85 Recommended R Microsemi Integrated Products Division LX5501B RODUCTION ATA HEET C2 3.6 4 4.4 4.8 5.2 5.6 Supply Voltage - Volts Value versus Maximum Supply Voltage EXT 6 Page 3 ...

Page 4

... InGAP HBT Gain Block ® Gain P1dB 0 2 2.5 3.4 3.5 3 Pout Gain (Vcc = 3.3V, Rext = 20 o hms) Microsemi Integrated Products Division LX5501B D S RODUCTION ATA HEET S21 S11 S12 S22 3 3.5 4 4.5 5 5.5 6 Frequency - GHz (Vcc = 3.3v, Rext = 20 ohms -10 -15 -20 -25 Page 4 ...

Page 5

... BSC 0.038 BSC G 1.90 BSC 0.075 BSC H 2.60 3.00 0.102 I 0.35 0.55 0.014 J 0.00 0.15 0.000 K 10° MAX 10° MAX Microsemi Integrated Products Division LX5501B D S RODUCTION ATA HEET C K MAX 0.051 0.057 0.020 0.008 0.122 0.069 0.118 0.022 0.006 ...

Page 6

... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...

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