LX5506BLQ-T/R MICROSEMI, LX5506BLQ-T/R Datasheet - Page 2

LX5506BLQ-T/R

Manufacturer Part Number
LX5506BLQ-T/R
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of LX5506BLQ-T/R

Manufacturer's Type
Power Amplifier
Number Of Channels
1
Frequency (max)
5.85GHz
Operating Supply Voltage (typ)
3.3V
Package Type
MLPQ EP
Mounting
Surface Mount
Pin Count
16
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Copyright © 2003
Rev. 1.0b, 2005-03-02
RF OUT
DC Supply Voltage, RF Off...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 15dBm
Thermal Resistance (Junction-to-Case, θ
Maximum Junction Temperature (T
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature.......................................................................... -65 to 150°C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure). 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Name
RF IN
GND
VCC
DET
VC1
VC2
VC3
VB1
VB2
VB3
NC
Ground. Currents are positive into, negative out of specified terminal
TM
Center
10, 11
Metal
12,13
Pin #
1, 8,
2, 3
16
15
14
4
5
6
7
9
A B S O L U T E M A X I M U M R A T I N G S
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and
VC3 pins, resulting in a single supply voltage (referred to as Vc).
Bias control voltage for the first stage.
Bias control voltage for the second stage.
Bias control voltage for the third stage.
Detector output for the third stage PA output power.
RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage.
DC supply voltage for the first stage amplifier.
DC supply voltage for the second stage amplifier.
DC supply voltage for the third stage amplifier.
The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the
power amplifier.
These pins are unused and not connected to the device inside the package. They can be treated either
as open (floating) pins, or connected to ground metal.
J
F U N C T I O N A L P I N D E S C R I P T I O N
max) .................................................. 150°C
JC
).................................................6°C/W
Integrated Products Division
®
Microsemi
.
InGaP HBT 4 – 6GHz Power Amplifier
Description
P
RODUCTION
RoHS / Pb-free 100% Matte Tin Lead Finish
D
P A C K A G E P I N O U T
ATA
S
HEET
LQ P
(Bottom View)
ACKAGE
LX5506B
Page 2

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