LH28F800BVE-BV85 Sharp Electronics, LH28F800BVE-BV85 Datasheet - Page 37

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LH28F800BVE-BV85

Manufacturer Part Number
LH28F800BVE-BV85
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F800BVE-BV85

Cell Type
NOR
Density
8Mb
Access Time (max)
85ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20/19Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
65mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
6.2.8 BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. All values are in word mode (BYTE#=V
t
t
t
t
t
t
t
t
sharp
WHQV1
EHQV1
WHQV2
EHQV2
WHRZ1
EHRZ1
WHRZ2
EHRZ2
Sym.
Word/Byte Write Time
Block Write Time
Block Erase Time
Word/Byte Write Suspend Latency Time
to Read
Erase Suspend Latency Time to Read
Parameter
A
=+25°C and nominal voltages. Subject to change based on device characterization.
32K word Block
4K word Block
32K word Block
4K word Block
32K word Block
4K word Block
IH
V
). At byte mode (BYTE#=V
CC
=5V±0.5V, T
LHF80V35
Notes
2,4
2,4
2
2
2
2
A
=0°C to +70°C
Typ.
12.2
18.3
0.08
0.46
0.26
V
0.4
9.6
5
PP
(1)
=4.5V-5.5V
IL
), those values are double.
Max.
12
6
(3)
Typ.
V
0.28
0.07
0.39
0.25
8.4
9.6
17
PP
4
=11.4V-12.6V
(1)
Max.
12
5
Rev. 1.1
Unit
µs
µs
µs
µs
s
s
s
s
34

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