LH28F800SGE-L10 Sharp Electronics, LH28F800SGE-L10 Datasheet - Page 7

• Manufacturer Part Number: LH28F800SGE-L10
• Manufacturer: Sharp Electronics

Specifications of LH28F800SGE-L10

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 19b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

2 PRINCIPLES OF OPERATION
The LH28F800SG-L/SGH-L SmartVoltage flash
memories include an on-chip WSM to manage
block erase, word write, and lock-bit configuration
functions. It allows for : 100% TTL-level control
inputs, fixed power supplies during block erasure,
word write, and lock-bit configuration, and minimal
processor overhead with RAM-like interface timings.
After initial device power-up or return from deep
power-down mode (see Table 2 "Bus Operations"),
the
Manipulation of external memory control pins allow
array read, standby, and output disable operations.
Status register and identifier codes can be
accessed through the CUI independent of the V
voltage. High voltage on V
block
configuration. All functions associated with altering
memory contents — block erase, word write, lock-
bit configuration, status, and identifier codes — are
accessed via the CUI and verified through the
status register.
Commands are written using standard micro-
processor write timings. The CUI contents serve as
input to the WSM, which controls the block erase,
word write, and lock-bit configuration. The internal
algorithms are regulated by the WSM, including
pulse repetition, internal verification, and margining
of data. Addresses and data are internally latched
during write cycles. Writing the appropriate
command outputs array data, accesses the
identifier codes, or outputs status register data.
Interface software that initiates and polls progress
of block erase, word write, and lock-bit configuration
can be stored in any block. This code is copied to
and executed from system RAM during flash
memory updates. After successful completion,
reads are again possible via the Read Array
command. Block erase suspend allows system
software to suspend a block erase to read/write
device
erasure,
defaults
word
to
writing,
PP
read
enables successful
array
and
lock-bit
mode.
PP
- 7 -
data from/to blocks other than that which is
suspended. Word write suspend allows system
software to suspend a word write to read data from
any other flash memory array location.
2.1 Data Protection
Depending on the application, the system designer
may choose to make the V
switchable (available only when memory block
erases, word writes, or lock-bit configurations are
required) or hardwired to V
accommodates
encourages optimization of the processor-memory
interface.
When V
altered. The CUI, with two-step block erase, word
write, or lock-bit configuration command sequences,
provides protection from unwanted operations even
when high voltage is applied to V
functions are disabled when V
lockout voltage V
device’s block locking capability provides additional
protection from inadvertent code or data alteration
by gating erase and word write operations.
3 BUS OPERATION
The local CPU reads and writes flash memory in-
system. All bus cycles to or from the flash memory
conform to standard microprocessor bus cycles.
3.1 Read
Information can be read from any block, identifier
codes, or status register independent of the V
voltage. RP# can be at either V
The first task is to write the appropriate read mode
command (Read Array, Read Identifier Codes, or
Read Status Register) to the CUI. Upon initial
device power-up or after exit from deep power-
down mode, the device automatically resets to read
array mode. Five control pins dictate the data flow
in and out of the component : CE#, OE#, WE#,
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
PP
≤ V
PPLK
LKO
either
, memory contents cannot be
or when RP# is at V
design
PPH1/2/3
CC
IH
PP
is below the write
or V
practice
power supply
. The device
PP
HH
. All write
.
IL
. The
and
PP