AM29F016-90EC AMD (ADVANCED MICRO DEVICES), AM29F016-90EC Datasheet

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AM29F016-90EC

Manufacturer Part Number
AM29F016-90EC
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29F016-90EC

Lead Free Status / Rohs Status
Not Compliant
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data appear on DQ0–DQ7.
The Am29F016 is offered in 48-pin TSOP and 44-pin SO
packages. This device is designed to be programmed
in-system with the standard system 5.0 Volt V
12.0 Volt V
operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard Am29F016 offers access times of 70
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention, the device has separate
5.0 Volt
— Minimizes system level power requirements
Compatible with JEDEC-standards
— Pinout and software compatible with
— Superior inadvertent write protection
48-pin TSOP
44-pin SO
Minimum 100,000 write/erase cycles
guaranteed
High performance
— 70 ns maximum access time
Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Group sector protection
— Hardware method that disables any combination
Embedded Erase Algorithms
— Automatically pre-programs and erases the chip
single-power supply Flash
Also supports full chip erase
of sector groups from write or erase operations
(a sector group consists of 4 adjacent sectors of
64 Kbytes each)
or any sector
PP
FINAL
10% for read and write operations
is not required for program or erase
CC
supply.
chip enable (CE), write enable (WE), and output
The Am29F016 is entirely command set compatible
with the JEDEC single-power supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F016 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
enable (OE) controls.
Embedded Program Algorithms
— Automatically programs and verifies data at
Data Polling and Toggle Bit feature for
detection of program or erase cycle
completion
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
Erase Suspend/Resume
— Supports reading or programming data to a
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
Enhanced power management for standby
mode
— <1 A typical standby current
— Standard access time from standby mode
Hardware RESET pin
— Resets internal state machine to the read mode
specified address
erase cycle completion
sector not being erased
Publication# 18805
Issue Date: April 1997
Rev: D Amendment/0

Related parts for AM29F016-90EC

AM29F016-90EC Summary of contents

Page 1

... Automatically pre-programs and erases the chip or any sector GENERAL DESCRIPTION The Am29F016 Mbit, 5.0 Volt-only Flash memory organized as 2 Megabytes of 8 bits each. The 2 Mbytes of data is divided into 32 sectors of 64 Kbytes for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. ...

Page 2

... This allows for sectors of memory to be erased and re- programmed without affecting the data contents of other sectors. A sector is typically erased and verified within one second. The Am29F016 is erased when shipped from the factory. The Am29F016 device also features hardware sector group protection. This feature will disable both pro- gram and erase operations in any combination of eight sector groups of memory ...

Page 3

... Register Detector CC A0–A20 5% -75 10 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic STB Timer Am29F016 -90 -120 -150 90 120 150 90 120 150 40 50 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Decoder Y-Gating Cell Matrix X-Decoder ...

Page 4

... CONNECTION DIAGRAMS RESET 42 A11 3 A12 A10 4 41 A13 A14 A15 A16 A17 A18 A19 A20 DQ0 17 28 RY/BY DQ1 27 18 DQ7 DQ2 19 26 DQ6 DQ3 25 20 DQ5 DQ4 18805D-3A Am29F016 ...

Page 5

... DQ5 10 DQ4 11 VCC 12 VSS 13 VSS 14 DQ3 15 DQ2 16 DQ1 17 DQ0 Standard TSOP Reverse TSOP Am29F016 NC NC A20 RY/BY DQ7 DQ6 DQ5 DQ4 VCC VSS VSS DQ3 DQ2 DQ1 DQ0 18805D A19 A18 45 A17 44 43 A16 42 A15 41 A14 40 A13 39 A12 VCC RESET 34 A11 ...

Page 6

... Pin Not Connected Internally OE = Output Enable RESET = Hardware Reset Pin, Active Low RY/BY = Ready/BUSY Output V = +5.0 Volt Single-Power Supply CC ( 10% for -90, -120, -150 for -95 Device Ground Write Enable 6 LOGIC SYMBOL 21 A0–A20 CE (E) OE (G) WE (W) RESET Am29F016 8 DQ0–DQ7 RY/BY 18805D-5 ...

Page 7

... AM29F016 -75 DEVICE NUMBER/DESCRIPTION Am29F016 16 Megabit (2M x 8-Bit) CMOS Flash Memory 5.0 Volt-only Program and Erase Valid Combinations AM29F016-75 AM29F016-90 AM29F016-120 AM29F016-150 OPTIONAL PROCESSING Blank = Standard Processing TEMPERATURE RANGE C = Commercial ( + Industrial (- +85 C) PACKAGE TYPE E = 48-Pin Thin Small Outline Package ...

Page 8

... OE Standby Mode There are two ways to implement the standby mode on the Am29F016 device, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V ...

Page 9

... Sequence). Byte 0 ( (AMD = 01H) and byte 1 ( code for Am29F016 = ADH. These two bytes are given in the table below. All identifiers for manufacturer and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the Autoselect, A1 must be V Table 2) ...

Page 10

... Table 3. Sector Address Table A18 A17 Am29F016 A16 Address Range 0 000000h-00FFFFh 1 010000h-01FFFFh 0 020000h-02FFFFh 1 030000h-03FFFFh 0 040000h-04FFFFh 1 050000h-05FFFFh 0 060000h-06FFFFh 1 070000h-07FFFFh 0 080000h-08FFFFh 1 090000h-09FFFFh 0 0A0000h-0AFFFFh 1 0B0000h-0BFFFFh 0 0C0000h-0CFFFFh 1 0D0000h-0DFFFFh 0 0E0000h-0EFFFFh 1 0F0000h-0FFFFFh 0 100000h-10FFFFh 1 110000h-11FFFFh 0 120000h-12FFFFh 1 130000h-13FFFFh 0 140000h-14FFFFh 1 150000h-15FFFFh 0 160000h-16FFFFh 1 170000h-17FFFFh 0 180000h-18FFFFh 1 190000h-19FFFFh 0 1A0000h-1AFFFFh 1 1B0000h-1BFFFFh 0 1C0000h-1CFFFFh 1 1D0000h-1DFFFFh 0 1E0000h-1EFFFFh 1 1F0000h-1FFFFFh ...

Page 11

... IL This feature allows temporary unprotection of previ- . Addresses are IH ously protected sector groups of the Am29F016 device in order to change data in-system. The Sector Group Unprotect mode is activated by setting the RESET pin to high voltage (12V). During this mode, formerly pro- tected sector groups can be programmed or erased by selecting the sector group addresses ...

Page 12

... Table 5. Am29F016 Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Read/Reset Req’d Addr Reset/Read 1 XXXXH Reset/Read 3 5555H Autoselect 3 5555H Byte Program 4 5555H Chip Erase 6 5555H Sector Erase 6 5555H Erase Suspend 1 XXXXH Erase Resume 1 XXXXH Notes: 1. Bus operations are defined in Table 1. ...

Page 13

... Sector Erase operation and then perform data reads or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Am29F016 13 ...

Page 14

... DQ6 can be read from any address. To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. An- other Erase Suspend command can be written after the chip has resumed erasing. Am29F016 ...

Page 15

... Reading the byte address being programmed while in the erase-suspend program mode will indicate logic ‘1’ at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. DQ7 Data Polling The Am29F016 device features Data Polling as a method to indicate to the host that the embedded algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the device will produce the complement of the data last written to DQ7 ...

Page 16

... DQ6 Toggle Bit I The Am29F016 also features the “Toggle Bit I” method to indicate to the host system that the embed- ded algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cy- cle, successive attempts to read (OE toggling) data from the device at any address will result in DQ6 tog- gling between one and zero ...

Page 17

... When the RY/BY pin is low, the device will not accept any additional program or erase com- mands with the exception of the Erase Suspend com- mand. If the Am29F016 is placed in an Erase Suspend mode, the RY/BY output will be high. During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse ...

Page 18

... EMBEDDED ALGORITHMS Increment Address Program Command Sequence (Address/Command): Figure 1. Embedded Programming Algorithm 18 Start Write Program Command Sequence (see below) Data Poll Device No Last Address ? Yes Programming Completed 5555H/AAH 2AAAH/55H 5555H/A0H Program Address/Program Data Am29F016 18805D-6 ...

Page 19

... Write Erase Command Sequence (see below) Data Polling or Toggle Bit I Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): 5555H/AAH 2AAAH/55H 5555H/80H 5555H/AAH 2AAAH/55H Sector Address/30H Sector Address/30H Sector Address/30H Figure 2. Embedded Erase Algorithm Am29F016 Additional sector erase commands are optional 18805C-7 19 ...

Page 20

... Read Byte = Valid address equals any non-protected sector (DQ0–DQ7) group address during chip erase Addr = VA Yes DQ7 = Data ? No DQ5 = 1 Yes ? Yes Read Byte (DQ0–DQ7) Addr = VA Yes DQ7 = Data ? No Pass Fail Figure 3. Data Polling Algorithm Am29F016 18805D-8 18805D-10 ...

Page 21

... V Figure 6. Maximum Positive Overshoot Waveform Start Read Byte (DQ0–DQ7) Addr = Don’t Care No DQ6 = Toggle ? Yes No DQ5 = 1 Yes ? Yes Read Byte (DQ0–DQ7) Addr = Don’t Care No DQ6 = Toggle ? Yes Pass Fail Figure 4. Toggle Bit I Algorithm Am29F016 18805D-9 18805D-11 21 ...

Page 22

... OPERATING RANGES Commercial (C) Devices Case Temperature (T Industrial (I) Devices Case Temperature (T V Supply Voltages CC V for Am29F016- +4. +5. for Am29F016-90, 120, 150. . +4. +5. Operating ranges define those limits between which the functionality of the device is guaranteed 2.0 V for ...

Page 23

... Embedded Program or Erase Algorithm is in progress Not 100% tested. Test Description Max Max 12.0 Volt Max OUT IL IL Max RESET = Max, RESET = 5.0 Volt mA Min –2 Min Am29F016 Min Max Unit 1 1 1.0 mA 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4 ...

Page 24

... Embedded Program or Erase Algorithm is in progress Not 100% tested. 24 Test Description Min Max Max 12.0 Volt OUT Max IL IL Max 0 RESET = V 0 Max RESET = V 0 –0.5 0 5.0 Volt 11 mA Min –2.5 mA Min 0. –100 Min 3 Am29F016 Typ Max Unit 12 – 0.4 V 4.2 V ...

Page 25

... Input rise and fall times Input pulse levels: 0. 2.4 V Timing measurement reference level: 0.8 V and 2.0 V input and output 3. Output driver disable time. 4. Not 100% tested. 5.0 Volt IN3064 or Equivalent 6 Figure 7. Test Conditions Am29F016 -90 -120 -150 Unit 90 120 150 ns 90 120 150 ns ...

Page 26

... These timings are for Temporary Sector Group Unprotect operation. 26 Min Min Min Min Min Read 2 Min Toggle Bit I and Data Polling Min 2 Min Min Min Min Min Typ Typ Max Min (Notes 2, 3) Min Min Min Min Min Am29F016 Speed Options (Notes 1 and 2) -75 -90 -120 -150 70 90 120 150 ...

Page 27

... May Will be Change Changing from from May Will be Change Changing from from Don’t Care, Changing, Any Change State Permitted Unknown Does Not Center Apply Line is High- Impedance “Off” State KS000010-PAL t RC Addresses Stable t ACC Output Valid Am29F016 ( High Z 18805D-12 27 ...

Page 28

... SA is the sector address for Sector Erase. Addresses = don’t care for Chip Erase. Figure 10. AC Waveforms Chip/Sector Erase Operations 28 Data Polling WHWH1 DQ7 D OUT Figure 9. Program Operation Timings t AH 2AAAH 5555H 5555H t AS 55H 80H Am29F016 18805D-13 2AAAH SA AAH 55H 10H/30H 18805D-14 DF ...

Page 29

... Embedded operation). Figure 12. AC Waveforms for Toggle Bit I During Embedded Algorithm Operations DQ7 t WHWH DQ0–DQ6 = Invalid * DQ6 = Toggle DQ6 = Toggle t OE Am29F016 High Z DQ7 = Valid Data DQ0–DQ7 Valid Data 18805D-15 DQ6 = DQ0–DQ7 Stop Toggling ...

Page 30

... Figure 15. Temporary Sector Group Unprotect Algorithm 30 The rising edge of the last WE signal Entire programming or erase operations t BUSY Ready Figure 14. RESET Timing Diagram Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Group Unprotect Completed (Note 2) Am29F016 18805D-17 18805D-18 18805D-21 ...

Page 31

... Erase Suspend WE DQ6 DQ2 Toggle DQ2 and DQ6 with OE Note: DQ2 is read from the erase-suspended sector. Program or Erase Command Sequence Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 17. DQ2 vs. DQ6 Am29F016 18805D-22 Erase Resume Erase Erase Complete Read 18805D-23 31 ...

Page 32

... This does not include the preprogramming time. 2. Not 100% tested. 32 Parameter Description Min Min Min Min Min Min Read (Note 2) Min Toggle Bit I and Data Polling Min (Note 2) Min Min Min Min Min Typ Typ Max Am29F016 Speed Options (Notes 1 and 2) -75 -90 -120 -150 70 90 120 150 ...

Page 33

... the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles of four bus cycle sequence. Figure 18. Alternate CE Controlled Program Operation Timing Data Polling GHEL WHWH1 t CPH DQ7 A0H Am29F016 D OUT 18805D-24 33 ...

Page 34

... CC = 5.0 Volt, one pin at a time. CC Test Conditions OUT Am29F016 Unit Comments Excludes 00H programming prior sec to erasure Excludes 00H programming prior sec to erasure s Excludes system-level overhead sec Excludes system-level overhead Min Max –1 ...

Page 35

... PHYSICAL DIMENSIONS TS 048 48-Pin Standard Thin Small Outline Package Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX 0.25MM (0.0098") BSC 48 11.90 12.10 25 0.08 0.20 0.10 0. 0.50 0.70 Am29F016 0.95 1.05 0.50 BSC 0.05 0.15 16-038-TS48-2 TS 048 DA101 8-8- ...

Page 36

... AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies 36 48 11.90 12.10 25 SEATING PLANE 0.08 0.20 0.10 0. 0.50 0.70 Am29F016 0.95 1.05 0.50 BSC 0.05 0.15 16-038-TS48 TSR048 DA104 8-8-94 ae ...

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