CY7C1345B-100BGC Cypress Semiconductor Corp, CY7C1345B-100BGC Datasheet

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CY7C1345B-100BGC

Manufacturer Part Number
CY7C1345B-100BGC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1345B-100BGC

Density
4Mb
Access Time (max)
8ns
Operating Supply Voltage (typ)
3.3V
Package Type
BGA
Operating Temp Range
0C to 70C
Supply Current
325mA
Operating Supply Voltage (min)
3.14V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
119
Word Size
36b
Lead Free Status / Rohs Status
Not Compliant
Features
Selection Guide
Cypress Semiconductor Corporation
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Intel and Pentium are registered trademarks of Intel Corporation.
• Supports 117-MHz microprocessor cache systems with
• 128K by 36 common I/O
• Fast clock-to-output times
• Two-bit wrap-around counter supporting either
• Separate processor and controller address strobes pro-
• Synchronous self-timed write
• Asynchronous output enable
• Supports 3.3V & 2.5V I/O levels
• ZZ “sleep” mode
Logic Block Diagram
zero wait states
interleaved or linear burst sequence
vide direct interface with the processor and external
cache controller
— 7.5 ns (117-MHz version)
BWS
ADSP
ADSC
A
BWS
BWS
BWS
CE
CE
CE
ADV
[16:0]
GW
BWE
CLK
OE
ZZ
0
1
2
3
2
1
3
128K x 36 Synchronous Flow-Through 3.3V Cache RAM
17
(A
MODE
0
,A
1
3901 North First Street
) 2
15
CE
CE
CLR
D
D
D
D
D
D
CE
DQ[31:24],DP3
DQ[23:16],DP2
DQ[15:8],DP1
CLK
BYTEWRITE
REGISTERS
BYTEWRITE
REGISTERS
BYTEWRITE
REGISTERS
DQ[7:0],DP0
REGISTERS
BYTEWRITE
REGISTER
COUNTER
REGISTER
CONTROL
ADDRESS
ENABLE
SLEEP
BURST
Q
Q
Q
Q
Q
Q
Q
Q
0
1
Functional Description
The CY7C1345B is a 3.3V, 128K by 36 synchronous cache
RAM designed to interface with high-speed microprocessors
with minimum glue logic. Maximum access delay from clock
rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter cap-
tures the first address in a burst and increments the address
automatically for the rest of the burst access.
The CY7C1345B allows either interleaved or linear burst se-
quences, selected by the MODE input pin. A HIGH selects an
interleaved burst sequence, while a LOW selects a linear burst
sequence. Burst accesses can be initiated with the Processor
Address Strobe (ADSP) or the cache Controller Address
Strobe (ADSC) inputs. Address advancement is controlled by
the Address Advancement (ADV) input.
A synchronous self-timed write mechanism is provided to sim-
plify the write interface. A synchronous chip enable input and
an asynchronous output enable input provide easy control for
bank selection and output three-state control.
15
San Jose
7C1345B-117
350
7.5
2.0
17
CA 95134
36
128K X 36
MEMORY
ARRAY
CY7C1345B
September 11, 2000
7C1345B-100
CLK
325
408-943-2600
REGISTERS
8.0
2.0
INPUT
36
DQ
DP
[31:0]
[3:0]

Related parts for CY7C1345B-100BGC

CY7C1345B-100BGC Summary of contents

Page 1

... Intel and Pentium are registered trademarks of Intel Corporation. Cypress Semiconductor Corporation Functional Description The CY7C1345B is a 3.3V, 128K by 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter cap- tures the first address in a burst and increments the address automatically for the rest of the burst access ...

Page 2

... Pin Configurations DDQ V 5 SSQ BYTE2 SSQ V 11 DDQ DDQ V 21 SSQ BYTE3 SSQ V 27 DDQ 100-Pin TQFP CY7C1345B CY7C1345B DDQ V SSQ BYTE1 10 V SSQ V DDQ DDQ V SSQ BYTE0 SSQ V DDQ ...

Page 3

... When ADSP and [1:0] to select one of the 64K address locations. Sampled [1: and CE are sampled active, and ADSP or ADSC is active controls DQ and controls DQ 0 [7: controls DQ and DP . See Write Cycle Description table for further details. 3 [31:24] 3 gates ADSP select/deselect the device CY7C1345B DDQ DQP ...

Page 4

... Maximum access delay from the clock rise ( 7.5 ns (117-MHz device). CDV The CY7C1345B supports secondary cache in systems utiliz- ing either a linear or interleaved burst sequence. The inter- leaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 5

... OE. Burst Sequences The CY7C1345B provides an on-chip 2-bit wraparound burst counter inside the SRAM. The burst counter is fed by A and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence ...

Page 6

... OE is asynchronous and is not sampled with the clock rise. During a read cycle DQ=High-Z when OE is inactive, and DQ=data when OE is active ADSP ADSC CY7C1345B ADV WE OE CLK L-H High L-H High L-H High L-H High L-H High High L L-H High L L L-H High L L-H High L L-H High L-H High L L-H High L L-H D Writes may occur only on subsequent clocks [3:0]. ...

Page 7

... Min. ZZ > > < 0.2V 2t CYC Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Ambient Range Temperature Com’l 0°C to +70°C + 0.5V Ind’l –40°C to +85° 0. CY7C1345B ...

Page 8

... IN IN DDQ inputs static Max Device Deselected – 0. 0.3V, IN DDQ inputs switching MAX Max Device Deselected –0. 0.3V inputs static 8 CY7C1345B Min. Max. 2.4 2.0 0.4 0.7 2 0.3V 1 0.3V –0.3 0.8 –0.3 0 –30 5 –5 30 –5 5 –300 8.5-ns cycle, 117 MHz ...

Page 9

... DD R1=317 3.3V 3.0V R2=351 GND 5 pF INCLUDING Rise Time: 1 V/ns JIG AND SCOPE (b) [9] Description [10, 12] [10, 12] (min.). CLZ 9 CY7C1345B Max. Unit 4.0 pF 4.0 pF ALL INPUT PULSES 90% 90% 10% 10% Fall Time: 1 V/ns -117 -100 Min. Max. Min. Max. Unit 8 ...

Page 10

... GW to define a write cycle (see Write Cycle Descriptions table). [3:0] 14. WDx stands for Write Data to Address X. B urst W rite ADSP ignored with CE inactive masks ADSP UNDEFINED = DON’T CARE 10 CY7C1345B Pipelined Write Unselected ADSC initiated write WD3 Unselected with CE 2 High-Z 3a ...

Page 11

... EOV t OEHZ t CDV Data Out CLZ Note: 15. RDx stands for Read Data from Address X. Burst Read ADSP ignored with Suspend Burst ADH masks ADSP DOH DON’T CARE = UNDEFINED 11 CY7C1345B Unselected Pipelined Read inactive 1 ADSC initiated read RD3 Unselected with CHZ ...

Page 12

... ADSP ignored with CE HIGH Q(B) (B+2) (B+1) (B+3) , and GW to define a write cycle (see Write Cycle Descriptions table). [1:0] and CE . All chip selects need to be active in order to select UNDEFINED = DON’T CARE 12 CY7C1345B ADH t CEH t CEH t WEH EOHZ D(C) (C+1) (C+2) (C+3) ...

Page 13

... ADSP initiated Reads ADSP ADV t CES CLZ Data In/Out Out Out Out t CDV Back to Back Reads CYC CL CH WD1 t ADH t CEH t WES ADSP ignored with CE HIGH Out In t DOH Back to Back Writes = UNDEFINED = DON’T CARE 13 CY7C1345B WD2 WD3 WD4 t WEH D( CHZ ...

Page 14

... Timing Diagrams (continued) OE Switching Waveforms OE t EOHZ I/Os t EOV three-state t EOLZ 14 CY7C1345B ...

Page 15

... CLK ADSP HIGH ADSC CE 1 LOW CE 2 HIGH I/Os Notes: 16. Device must be deselected when entering ZZ mode. See Cycle Description Table for all possible signal conditions to deselect the device. 17. I/Os are in three-state when exiting ZZ sleep mode. t ZZS I (active CCZZ Three-state 15 CY7C1345B t ZZREC ...

Page 16

... Ordering Information Speed (MHz) Ordering Code 117 CY7C1345B-117AC CY7C1345B-117BGC 100 CY7C1345B-100AC CY7C1345B-100BGC CY7C1345B-100AI CY7C1345B-100BGI Document #: 38-00953-*B Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Package Name Package Type A101 100-Lead Thin Quad Flat Pack BG119 119-Ball BGA A101 100-Lead Thin Quad Flat Pack ...

Page 17

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead FBGA ( 2.4 mm) BG119 CY7C1345B 51-85115 ...

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