SI4812DY Vishay, SI4812DY Datasheet - Page 3

• Manufacturer Part Number: SI4812DY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4812DY

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6.9A
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 71775
S-41426—Rev. G, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
V
I
On-Resistance vs. Drain Current
D
V
DS
10
1
= 9 A
5
DS
Q
= 15 V
g
− Drain-to-Source Voltage (V)
V
Output Characteristics
− Total Gate Charge (nC)
V
GS
I
GS
D
= 4.5 V
− Drain Current (A)
Gate Charge
= 10 thru 5 V
20
10
2
30
15
3
V
GS
40
20
4
= 10 V
4 V
3 V
50
25
5
1800
1500
1200
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
0
−50
0
0
On-Resistance vs. Junction Temperature
−25
V
I
D
GS
= 9 A
5
1
V
C
= 10 V
V
GS
rss
DS
0
Transfer Characteristics
T
C
J
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
− Junction Temperature (_C)
oss
10
25
25_C
Capacitance
2
T
C
= 125_C
15
50
Vishay Siliconix
C
iss
3
75
20
−55_C
Si4812DY
100
4
25
www.vishay.com
125
150
30
5
3