SI9410DY-T1 Vishay, SI9410DY-T1 Datasheet
SI9410DY-T1
Specifications of SI9410DY-T1
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SI9410DY-T1 Summary of contents
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... N Top View Ordering Information: Si9410DY Si9410DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si9410DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge ...
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... Q - Total Gate Charge (nC) g Document Number: 70122 S-31060—Rev. M, 26-May- 2400 2000 1600 1200 800 400 2.0 1.6 1.2 0.8 0.4 0 Si9410DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si9410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...