MMDF2C02HDR2 ON Semiconductor, MMDF2C02HDR2 Datasheet
MMDF2C02HDR2
Specifications of MMDF2C02HDR2
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MMDF2C02HDR2 Summary of contents
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... P 2.0 Watts P−Source 405 324 R 62.5 °C/W θJA Device T 260 °C L MMDF2C02HDR2 Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 2 AMPERES 20 VOLTS = 90 mW (N−Channel) = 160 mW (P−Channel) P−Channel MARKING DIAGRAM SO−8, Dual D2C02 CASE 751 ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 μAdc Zero Gate Voltage Drain Current ( Vdc Vdc Gate−Body Leakage Current (V = ± 20 ...
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ELECTRICAL CHARACTERISTICS − continued Characteristic SWITCHING CHARACTERISTICS − continued (Note 6) Total Gate Charge (V Gate−Source Charge DS Gate−Drain Charge (V DS SOURCE−DRAIN DIODE CHARACTERISTICS (T Forward Voltage (Note Reverse Recovery Time ( ...
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TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 3 3 3 0.2 0.4 0.6 0.8 1 ...
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TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 0 1 25°C J 0.4 0 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 3. On−Resistance versus Gate−To−Source Voltage 0. 25°C ...
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TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 1000 125°C J 100 100°C 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 6. Drain−To−Source Leakage Current versus Voltage Switching behavior is most easily ...
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N−Channel 1400 1200 C iss 1000 800 C rss 600 400 200 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts) Figure 7. Capacitance ...
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... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...
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The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...
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TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 15. Diode Reverse Recovery Waveform Normalized to θja at 10s. Chip 0.0175 Ω 0.0710 Ω 0.0154 ...
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INFORMATION FOR USING THE SO−8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...
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For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...