MTB33N10E ON Semiconductor, MTB33N10E Datasheet

MTB33N10E

Manufacturer Part Number
MTB33N10E
Description
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of MTB33N10E

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.06Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
33A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Dc
0106
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTB33N10E
Manufacturer:
ON
Quantity:
1 537
MTB33N10E
Power MOSFET
33 Amps, 100 Volts
N−Channel D
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
with the minimum recommended pad size
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured − Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
DSS
Derate above 25°C
when mounted with the minimum
recommended pad size
Range
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10
seconds
L
− Continuous
− Non−Repetitive (t
− Junction to Case
− Junction to Ambient
− Junction to Ambient, when mounted
DD
= 33 Apk, L = 1.000 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
J
2
GS
p
= 10 Vdc,
= 25°C
(T
PAK
≤ 10 ms)
= 1.0 MΩ)
C
= 25°C unless otherwise noted)
A
Preferred Device
= 25°C,
p
G
≤ 10 μs)
= 25 Ω)
Symbol
T
V
V
V
R
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
θJC
θJA
θJA
GS
AS
D
D
D
L
stg
− 55 to
Value
± 20
± 40
62.5
100
100
125
150
545
260
1.0
2.5
1.0
33
20
99
50
1
Watts
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
Preferred devices are recommended choices for future use
and best overall value.
MTB33N10E
MTB33N10ET4
Device
1
ORDERING INFORMATION
G
3
T33N10E
Y
WW
2
R
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
http://onsemi.com
33 AMPERES
DS(on)
100 VOLTS
1
N−Channel
Package
T33N10E
YWW
D
D
2
2
Drain
4
Drain
D
PAK
PAK
4
= 60 mΩ
2
Publication Order Number:
= Device Code
= Year
= Work Week
S
CASE 418B
3
Source
STYLE 2
800/Tape & Reel
D
50 Units/Rail
2
MTB33N10E/D
PAK
Shipping

Related parts for MTB33N10E

MTB33N10E Summary of contents

Page 1

... DS(on) N−Channel PAK CASE 418B 2 1 STYLE 2 3 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain T33N10E YWW Gate Drain Source T33N10E = Device Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping 2 D PAK 50 Units/Rail 2 D PAK 800/Tape & Reel Publication Order Number: MTB33N10E/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 100 Vdc Vdc 100 Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.09 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25°C 100 C 10 100 μ 1.0 R LIMIT DS(on) 0.1 THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated ...

Page 7

INFORMATION FOR USING THE D RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection 0.42 ...

Page 8

Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Cladt. Using a board material such as Thermal Clad, an aluminum core Prior to placing surface mount components onto a printed circuit board, ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 10

... J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTB33N10E/D ...

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