SI2304DS-T1 Vishay, SI2304DS-T1 Datasheet

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SI2304DS-T1

Manufacturer Part Number
SI2304DS-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI2304DS-T1

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.117Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
2.5A
Power Dissipation
1.25W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236
Lead Free Status / Rohs Status
Not Compliant

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Notes
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Surface Mounted on FR4 Board, t
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
V
DS
30
30
(V)
a
a
b
J
J
= 150 C)
= 150 C)
a
c
0.190 @ V
0.117 @ V
r
DS(on)
Parameter
Parameter
a
a
5 sec.
GS
GS
N-Channel 30-V (D-S) MOSFET
( )
= 4.5 V
= 10 V
a
G
S
I
D
2.5
2.0
(A)
1
2
Si2304DS (A4)*
T
T
T
T
*Marking Code
A
A
A
A
(SOT-23)
= 25 C
= 70 C
= 25 C
= 70 C
Top View
TO-236
3
Symbol
Symbol
T
D
R
R
V
J
V
I
P
P
, T
DM
I
I
I
thJA
thJA
DS
GS
D
D
S
D
D
stg
www.vishay.com FaxBack 408-970-5600
–55 to 150
Limit
Limit
Vishay Siliconix
1.25
1.25
0.80
100
166
2.5
2.0
30
10
20
Si2304DS
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
1

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SI2304DS-T1 Summary of contents

Page 1

... Surface Mounted on FR4 Board sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70756 S-63633—Rev. D, 01-Nov-99 I (A) D 2.5 2.0 TO-236 (SOT-23 Top View Si2304DS (A4)* *Marking Code Symbol ...

Page 2

... Si2304DS Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V( Gate-Threshold Voltage V Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current On-State Drain Current a a Drain-Source On-Resistance Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge ...

Page 3

... Total Gate Charge (nC) g Document Number: 70756 S-63633—Rev. D, 01-Nov- 500 400 300 200 100 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0 –50 Si2304DS Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( 2 –25 ...

Page 4

... Si2304DS Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.3 0.2 0.1 –0 250 A D –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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