TEMD5100 Vishay, TEMD5100 Datasheet

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TEMD5100

Manufacturer Part Number
TEMD5100
Description
Manufacturer
Vishay
Type
Chipr
Datasheet

Specifications of TEMD5100

Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Peak Wavelength
950nm
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
55uA
Rise Time
100ns
Fall Time
100ns
Lens Type
Epoxy
Photodiode Material
Si
Mounting
Surface Mount
Pin Count
2
Package Type
SMD
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEMD5100
Manufacturer:
VISHAY
Quantity:
1 500
Part Number:
TEMD5100
Manufacturer:
VISHAY
Quantity:
1 000
Silicon PIN Photodiode
Description
TEMD5100 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO-5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
flat case gives a high sensitivity at a wide viewing
angle.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81553
Rev. 1.5, 28-Nov-06
• Large radiant sensitive area (A = 7.5 mm
• Wide angle of half sensitivity ϕ = ± 65 °
• High photo sensitivity
• Fast response times
• Small junction capacitance
• Plastic case with IR filter (λ = 950 nm)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse voltage
Power dissipation
Junction temperature
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
Breakdown voltage
Reverse dark current
Diode capacitance
amb
amb
p
and WEEE 2002/96/EC
= 950 nm). The large active area combined with a
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
T
t ≤ 3 s
I
V
V
V
R
amb
R
R
R
= 100 µA, E = 0
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
≤ 25 °C
Test condition
Test condition
2
)
e4
Applications
Symbol
• High speed photo detector
V
C
C
(BR)
I
ro
D
D
Symbol
R
T
T
V
P
thJA
T
stg
sd
R
V
j
Min
60
- 55 to + 100
Vishay Semiconductors
Value
Typ.
215
100
260
350
60
70
25
2
TEMD5100
12775
Max
30
40
www.vishay.com
K/W
Unit
mW
°C
°C
°C
V
Unit
nA
pF
pF
V
1

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TEMD5100 Summary of contents

Page 1

... Silicon PIN Photodiode Description TEMD5100 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replace- ment of TO-5 devices in many applications. The epoxy package itself filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ ...

Page 2

... TEMD5100 Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Open circuit voltage mW/cm e Short circuit current mW/cm e Reverse light current mW/ Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth = 10 V, λ = 950 nm V Noise equivalent power Rise time Fall time ...

Page 3

... Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81553 Rev. 1.5, 28-Nov-06 100 1050 1150 10° 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 TEMD5100 Vishay Semiconductors www.vishay.com 3 ...

Page 4

... TEMD5100 Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 12774 Document Number 81553 Rev. 1.5, 28-Nov-06 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81553 Rev. 1.5, 28-Nov-06 and may do so without further notice. TEMD5100 Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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