S268P Vishay, S268P Datasheet
S268P
Specifications of S268P
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S268P Summary of contents
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... Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline con- figuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a ra- 2 diant sensitive area of 7.5 mm ...
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... S268P Vishay Semiconductors Basic Characteristics = amb Parameter Breakdown Voltage I R Reverse Dark Current V R Diode Capacitance Open Circuit Voltage E e Temp. Coefficient Short Circuit Current Temp. Coefficient 950 nm Reverse Light Current 950 nm, V Reverse Light Current Ratio of Two Diodes Angle of Half Sensitivity ...
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... Figure 6. Diode Capacitance vs. Reverse Voltage 1.0 0.8 0.6 0.4 0 350 94 8420 Figure 7. Relative Spectral Sensitivity vs. Wavelength 1.0 0.9 0.8 0.7 100 0.6 0.4 94 8406 Figure 8. Relative Radiant Sensitivity vs. S268P Vishay Semiconductors E=0 f=1MHz 100 – Reverse Voltage ( 1150 550 750 950 l – Wavelength ( ...
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... S268P Vishay Semiconductors n. Dimensions in mm www.vishay.com 4 ( 12185 Document Number 81538 Rev. 2, 20-May-99 ...
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... Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone 7131 67 2831, Fax number 7131 67 2423 Document Number 81538 Rev. 2, 20-May-99 S268P Vishay Semiconductors www.vishay.com 5 (5) ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...