PS5G04S Stanley Electric Co, PS5G04S Datasheet
PS5G04S
Specifications of PS5G04S
Related parts for PS5G04S
PS5G04S Summary of contents
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... Die materials Soldering methods ESD Packing Recommended Applications Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications 2009.3.23 PS5G04S Through-hole Phototransistor/φ5 Type φ5 Type, Water clear epoxy ・High Photo Current : 12.0mA TYP. (V ・Narrow distribution ・Lead–free soldering compatible ・RoHS compliant 880nm 20 deg ...
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... ※ 1 Ee=1mW/cm V =10V, Ic=2mA, CE tr/tf R =100Ω =10V I CEO CEO λp V =5V CE Ic=0.5mA Ee=10mW/cm - ⊿θ PS5G04S Through-hole Phototransistor/φ5 Type (Ta=25℃) Unit ℃ ℃ (Ta=25℃) Characteristics Unit Min. 1.5 mA TYP Max μs TYP. 5/5 μA Max. 0.2 TYP ...
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... Photo Current Rank Rank ※Please contact our sales staff concerning rank designation. 2009.3.23 Ic(mA) MIN. MAX. 1.5 3.0 2.4 4.8 4.0 8.0 7.0 14.0 12.0 24.0 PS5G04S Through-hole Phototransistor/φ5 Type (Ta=25℃) Condition 1mW/cm Page 3 ...
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... Condition : Ta = 25℃, Vce = 5V Irradiance Ee(mW/ based on Ee=1mW/ Employs a standard tungsten lamp of 2,856K. 2009.3.23 Collector-Emitter Voltage vs. Photo Current ) 2 Employs a standard tungsten lamp of 2,856K. PS5G04S Through-hole Phototransistor/φ5 Type Spatial Distribution Example Condition : Ta = 25℃ Relative Photo Current (%) Condition : Ta = 25℃ Collector-Emitter Voltage V (V) CE Page 4 ...
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... Technical Data Response Time Measuring Circuit Ambient Temperature vs. Collector Dissipation Ambient Temperature : Ta(℃) 2009.3.23 PS5G04S Through-hole Phototransistor/φ5 Type Ambient Temperature vs. Relative Photo Current Condition : V =10V, Ic=2mA, Ta=25℃ Load Resistance : R (Ω) L Ambient Temperature vs. Dark Current Condition : V Ambient Temperature : Ta(℃ 10V ...
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... Technical Data Ambient Temperature vs. Relative Photo Current Ambient Temperature : Ta(℃) 2009.3.23 Condition : PS5G04S Through-hole Phototransistor/φ5 Type Page 6 ...
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... Package Dimensions 2009.3.23 PS5G04S Through-hole Phototransistor/φ5 Type (Unit: mm) Page 7 ...
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... Type Devices“ and "Soldering", and use it after the confirmation, please. 2009.3.23 100 ℃ (MAX.) Resin surface temperature 265 ℃ (MAX.) (MAX least 3.0 mm away from the root of lead 400 ℃ (MAX.) (30 W Max (MAX.) 1 time (MAX.) At least 3.0 mm away from the root of lead PS5G04S Through-hole Phototransistor/φ5 Type Page 8 ...
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... Value of each product E Irradiance of Photo Current V Value of each product CE Collector-emitter Voltage of Photo Current V Value of each product CEO Collector-emitter Voltage of Dark Current PS5G04S Through-hole Phototransistor/φ5 Type Duration 1,000 cycles 1,000 h 1,000 h 1,000 h 10s 2 h Failure criteria Testing Max. Value ≧Initial Value x 1.3 Testing Min. Value ≦ ...
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... Exchange and Foreign Trade Control Law,” necessary to first obtain an export permit from the Japanese government part of this data sheet may be reprinted or reproduced without prior written permission from Stanley Electric Co., Ltd. 7) The most updated edition of this data sheet can be obtained from the address below: http://www.stanley-components.com 2009.3.23 PS5G04S Through-hole Phototransistor/φ5 Type Page 10 ...