BF998B-GS18 Vishay, BF998B-GS18 Datasheet - Page 4

• Manufacturer Part Number: BF998B-GS18
• Manufacturer: Vishay

Specifications of BF998B-GS18

• Application: UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 12V
• Power Gain (typ)@vds: 28@8VdB
• Noise Figure (max): 1.5(Typ)dB
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.024S
• Input Capacitance (typ)@vds: 2.1@8V@Gate 1/1.1@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.05@8VpF
• Reverse Capacitance (typ): 0.025@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

BF998 / BF998R / BF998RW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
4
96 12159
12812
12816
Figure 1. Total Power Dissipation vs. Ambient Temperature
300
250
200
150
100
50
30
25
20
15
10
Figure 3. Drain Current vs. Gate 1 Source Voltage
20
16
12
Figure 2. Drain Current vs. Drain Source Voltage
0
5
0
8
4
0
–0.8
0
0
V
G2S
V
20
T
DS
amb
V
–0.4
V
= 4 V
= 8 V
G1S
2
DS
40
- Ambient Temperature ( °C )
– Drain Source Voltage ( V )
– Gate 1 Source Voltage ( V )
4 V
60
5 V
0.0
6 V
4
80 100 120 140 160
0.4
6
V
V
G1S
G2S
3 V
0.8
2 V
8
= 0.6 V
= –1 V
–0.2 V
–0.4 V
0.2 V
0.4 V
1 V
0
0
1.2
10
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
12817
12863
12864
Figure 6. Output Capacitance vs. Drain Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
Figure 4. Drain Current vs. Gate 2 Source Voltage
8
4
0
–0.6
-2
2
-1.5
V
V
V
DS
V
V
G1S
–0.2
f = 1 MHz
G2S
DS
V
G2S
4
= 8 V
DS
– Gate 1 Source Voltage ( V )
= 8 V
-1
= 4 V
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
0.2
-0.5
6
0
0.6
5 V
8
V
0.5
f = 1 MHz
G2S
V
4 V
G1S
1.0
10
= 4 V
Document Number 85011
1.0
= –1 V
3 V
1 V
2 V
0
Rev. 1.6, 31-Aug-05
1.5
1.4
12