SST310-T1 Vishay, SST310-T1 Datasheet - Page 4

• Manufacturer Part Number: SST310-T1
• Description: JFET 35V 24mA
• Manufacturer: Vishay

Specifications of SST310-T1

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Gate-source Breakdown Voltage: - 25 V
• Forward Transconductance Gfs (max / Min): 0.008 S
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: No

J/SST/U308 Series
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
100
100
80
60
40
20
80
60
40
20
15
12
0
0
9
6
3
0
0
0
0
I
g
f = 1 kHz
On-Resistance and Output Conductance
DSS
fs
Drain Current and Transconductance
@ V
V
@ V
V
GS(off)
V
r
g
vs. Gate-Source Cutoff Voltage
vs. Gate-Source Cutoff Voltage
GS(off)
GS(off)
DS
os
0.2
−1
−1
DS
DS
@ I
@ V
V
= 10 V, V
= −1.5 V
DS
Output Characteristics
= 10 V, V
− Gate-Source Cutoff Voltage (V)
r
− Gate-Source Cutoff Voltage (V)
D
DS
DS
− Drain-Source Voltage (V)
= 1 mA, V
= 10 V, V
g
0.4
fs
−2
−2
GS
GS
= 0 V
= 0 V
GS
GS
= 0 V
I
DSS
= 0 V, f = 1 kHz
0.6
−3
−3
g
os
V
GS
= 0 V
−0.2 V
−0.6 V
−1.0 V
−0.4 V
−0.8 V
0.8
−4
−4
A
= 25_C UNLESS OTHERWISE NOTED)
−5
−5
1
50
40
30
20
10
0
300
240
180
120
60
0
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
20
16
12
30
24
18
12
8
4
0
6
0
0.1
0
0
Common-Source Forward Transconductance
V
T
T
GS(off)
A
A
25_C
V
= 125_C
= 25_C
GS(off)
I
0.2
I
GSS
3
G
= −3 V
V
@
V
= −3 V
DS
Output Characteristics
Gate Leakage Current
@ 125_C
DG
I
D
I
D
− Drain-Source Voltage (V)
= 10 mA
vs. Drain Current
− Drain-Gate Voltage (V)
− Drain Current (mA)
0.4
6
10 mA
T
A
−0.4 V
= −55_C
1
S-50149—Rev. H, 24-Jan-05
Document Number: 70237
125_C
0.6
200 mA
9
V
f = 1 kHz
I
DS
200 mA
GSS
V
GS
= 10 V
12
0.8
@ 25_C
= 0 V
−1.2 V
−1.6 V
−2.0 V
−2.4 V
−0.8 V
15
10
1