SI2312DS-T1 Vishay, SI2312DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2312DS-T1
• Description: MOSFET Small Signal 20V 3.77A
• Manufacturer: Vishay

Specifications of SI2312DS-T1

• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.77 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71338
S-50574—Rev. E, 04-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.15
0.12
0.09
0.06
0.03
0.00
0.1
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
= 5.0 A
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
= 10 V
V
T
4
GS
3
V
J
SD
= 150_C
Q
= 1.8 V
g
− Source-to-Drain Voltage (V)
I
0.4
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
8
6
0.6
12
9
T
J
0.8
= 25_C
V
V
GS
GS
= 2.5 V
16
12
= 4.5 V
1.0
1.2
20
15
1500
1200
0.20
0.15
0.10
0.05
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 5.0 A
= 4.5 V
C
4
oss
T
V
V
0
2
C
J
DS
GS
I
− Junction Temperature (_C)
D
iss
= 5.0 A
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
8
Vishay Siliconix
50
4
C
rss
12
75
Si2312DS
100
6
16
www.vishay.com
125
150
20
8
3