SI3456DV-T1 Vishay, SI3456DV-T1 Datasheet
SI3456DV-T1
Specifications of SI3456DV-T1
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SI3456DV-T1 Summary of contents
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... DS DS(on) 0.045 @ 0.065 @ TSOP-6 Top View 2.85 mm Ordering Information: Si3456DV-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si3456DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... Gate Charge 5 Total Gate Charge (nC 1000 800 600 400 200 1.60 1.45 1.30 1.15 1.00 0.85 0. Si3456DV Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 5 100 125 T - Junction Temperature (_C ...
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... Si3456DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...