SI4804DY-T1 Vishay, SI4804DY-T1 Datasheet

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SI4804DY-T1

Manufacturer Part Number
SI4804DY-T1
Description
MOSFET Small Signal 30V 7.5A 2W
Manufacturer
Vishay
Datasheet

Specifications of SI4804DY-T1

Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
1.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4804DY-T1
Manufacturer:
MAGNACHIP
Quantity:
3 000
Part Number:
SI4804DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4804DY-T1-E3
Manufacturer:
VISHAY
Quantity:
23 000
Part Number:
SI4804DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 929
Part Number:
SI4804DY-T1-E3
Manufacturer:
SILI
Quantity:
1 655
Part Number:
SI4804DY-T1-E3
Manufacturer:
SILI
Quantity:
20 000
Part Number:
SI4804DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71088
S-50524—Rev. E, 28-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
Ordering Information: Si4804DY
(V)
J
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
J
J
a
a
0.030 @ V
0.022 @ V
= 150_C)
= 150_C)
t
Si4804DY-T1 (with Tape and Reel)
Si4804DY—E3 (Lead (Pb)-Free)
Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
7.5
6.5
(A)
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D 100% R
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
I
AS
thJA
thJF
DS
GS
D
D
S
AS
D
D
stg
G
1
g
N-Channel MOSFET
Tested
10 secs
Typical
7.5
6.0
1.7
2.0
1.3
52
93
35
D
S
1
1
−55 to 150
"20
30
20
10
5
G
Steady State
2
Maximum
Vishay Siliconix
N-Channel MOSFET
62.5
110
5.7
4.6
0.9
1.1
0.7
40
D
S
Si4804DY
2
2
www.vishay.com
Available
Unit
Pb-free
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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SI4804DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4804DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 71088 S-50524—Rev. E, 28-Mar-05 1000 25_C J 0.8 1.0 1.2 Si4804DY Vishay Siliconix Capacitance 800 C iss 600 400 C oss C 200 rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 7 1.4 1 ...

Page 4

... Si4804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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