TP2522N8 Supertex, TP2522N8 Datasheet

MOSFET Small Signal 220V 12Ohm

TP2522N8

Manufacturer Part Number
TP2522N8
Description
MOSFET Small Signal 220V 12Ohm
Manufacturer
Supertex
Datasheet

Specifications of TP2522N8

Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 Ohms
Drain-source Breakdown Voltage
- 220 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 260 mA
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP2522N8-G
Manufacturer:
Supertex
Quantity:
1 877
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*
Distance of 1.6 mm from case for 10 seconds.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TP2520
Device
TO-243AA (SOT-89)
Package Option
TP2520N8-G
1235 Bordeaux Drive, Sunnyvale, CA 94089
P-Channel Enhancement Mode
Vertical DMOS FETs
-55°C to +150°C
300°C
Value
BV
BV
±20V
DGS
DSS
BV
DSS
-200
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
(V)
Pin Configuration
Product Marking
Package may or may not include the following marks: Si or
/BV
DGS
TP5CW
Tel: 408-222-8888
TO-243AA (SOT-89) (N8)
TO-243AA (SOT-89) (N8)
R
(max)
DS(ON)
(Ω)
12
W = Code for week sealed
DRAIN
GATE
www.supertex.com
= “Green” Packaging
DRAIN
V
(max)
-2.4
GS(th)
(V)
SOURCE
TP2520
-0.75
I
(min)
D(ON)
(A)

Related parts for TP2522N8

TP2522N8 Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... I DS 125 -25V 1.0 MHz -25V -750mA 25Ω GEN PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com TP2520 I † DR DRM (A) -2.0 = -1.0mA = -1.0mA = Max Rating = 125°C = -25V DS = -25V DS = -100mA D = -200mA D = -200mA D = -200mA D = -500mA = -500mA D.U.T. Output ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics -2.0 -1 -10V GS -1.2 -0.8 -0 (volts Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 1 100 T (°C) A Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-243AA T = 25° 0.001 0.01 0 (seconds) P ● Tel: 408-222-8888 ● www.supertex.com TP2520 -8V -6V -4V -3V -10 125 150 10 ...

Page 4

... Variation with Temperature (th -10V, -0.2A DS(ON) 1.1 1 -1mA (th) 0.9 0.8 - 100 T (°C) j Gate Drive Dynamic Characteristics - -10V - -40V DS -4 200pF -2 73pF 0 1.5 0 0.5 1.0 2.0 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TP2520 -2.5 2.5 2.0 1.5 1.0 0.5 0 150 2.5 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

Related keywords