SI4542DY-T1 Vishay, SI4542DY-T1 Datasheet

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SI4542DY-T1

Manufacturer Part Number
SI4542DY-T1
Description
MOSFET Power 30V 6.9/6.1A 2W
Manufacturer
Vishay
Datasheet

Specifications of SI4542DY-T1

Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A, - 6.1 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
15 ns, 25 ns
Minimum Operating Temperature
- 55 C
Rise Time
10 ns
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4542DY-T1
Manufacturer:
HOLTEK
Quantity:
6 500
Part Number:
SI4542DY-T1-E3
Manufacturer:
ON
Quantity:
1 600
Part Number:
SI4542DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4542DY-T1-E3
Quantity:
70 000
Part Number:
SI4542DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ordering Information:
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70666
S09-0868-Rev. G, 18-May-09
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
G
G
S
S
1
1
2
2
1
2
3
4
V
DS
- 30
30
Si4542DY -T1-E3
Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
(V)
SO-8
0.045 at V
J
a
0.032 at V
N- and P-Channel 30-V (D-S) MOSFET
0.035 at V
0.025 at V
= 150 °C)
a
8
7
6
5
R
(Lead (Pb)-free)
DS(on)
D
D
D
D
GS
GS
1
1
2
2
GS
GS
a
(Ω)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
a
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
- 6.1
- 5.1
D
6.9
5.8
(A)
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
I
I
thJA
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Definition
G
1
N-Channel
N-Channel MOSFET
g
± 20
6.9
5.5
1.7
Tested
30
40
®
N- or P-Channel
Power MOSFET
D
S
1
1
- 55 to 150
62.5
2.0
1.3
P-Channel
± 20
- 6.1
- 4.9
- 1.7
- 30
- 40
G
2
Vishay Siliconix
P-Channel MOSFET
Si4542DY
S
D
www.vishay.com
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI4542DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4542DY -T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4542DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May- 2.5 3.0 3.5 4 Si4542DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 3000 2500 C iss 2000 1500 C oss 1000 500 C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4542DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 5

... On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 70666 S09-0868-Rev. G, 18-May- thru 2.5 3.0 3.5 4.0 3200 2400 1600 Si4542DY Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 800 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1. 1. ...

Page 6

... Si4542DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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