LX5506BLQ MICROSEMI, LX5506BLQ Datasheet

LX5506BLQ

Manufacturer Part Number

LX5506BLQ

Description

RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP

Manufacturer

MICROSEMI

Type

Power Amplifierr

Datasheet

1.LX5506BLQ.pdf (7 pages)

Specifications of LX5506BLQ

Package

16MLPQ EP

Number Of Channels Per Chip

Typical Gain Flatness

Â±0.5 dB

Typical Output Power

26@5850MHz dBm

Typical Power Gain

21@5850MHz dB

Maximum Operating Frequency Range

5000 to 10000 MHz

Maximum Output Return Loss

10(Typ)@5850MHz dB

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Price

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Part Number:

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Part Number:

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Part Number:

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Current page: 1 of 7
Download datasheet (201Kb)

Rev. 1.0b, 2005-03-02

optimized for the FCC Unlicensed

National Information Infrastructure

(U-NII) band, HyperLAN2 and Japan

WLAN applications in the 4.9-5.85

GHz frequency range.

implemented

monolithic

circuit (MMIC) with active bias, on-

chip input matching and output pre-

matching. It also features an on-chip

output power detector to help reduce

BOM cost and PCB board space for

system implementations. The device is

manufactured with an InGaP/GaAs

Heterojunction

(HBT) IC process (MOCVD).

operates with a single positive voltage

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

The LX5506B is a power amplifier

microwave

Bipolar

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

P R O D U C T H I G H L I G H T

The PA is

three-stage

Transistor

integrated

D E S C R I P T I O N

Method 3015 (HBM) testing.

observed when handling this device.

Note: Available in Tape & Reel. Append the letters “TR” to the part number.

This device is classified as ESD Level 0 in accordance with MIL-STD-883,

supply

+26dBm of P1dB and up to 25dB

power gain in the 5.15 - 5.85GHz

frequency range with a simple output

matching capacitor pair.

3mmx3mm micro-lead package (MLP).

The compact footprint, low profile, and

excellent thermal capability of the MLP

package makes the LX5506B an ideal

solution

power amplifier requirements for IEEE

802.11a,

WLAN applications.

LX5506B is available in a 16-pin

Plastic MLPQ

16-Pin

P A C K A G E O R D E R I N F O

Integrated Products Division

for

RoHS Compliant / Pb-free

and

Microsemi

LX5506BLQ

(i.e. LX5506BLQ-TR)

3.3V

broadband,

HiperLAN2

Appropriate ESD procedures should be

(nominal),

InGaP HBT 4 – 6GHz Power Amplifier

high-gain

portable

with

RODUCTION

A P P L I C A T I O N S / B E N E F I T S

Advanced InGaP HBT

Single-Polarity Voltage Supply

EVM ~ 2.5% at Pout=+18dBm,

64QAM/ 54Mbps OFDM (3.3V)

Power Gain ~ 25dB at 5.25GHz

& Pout=+18dBm

Power Gain ~ 21dB at 5.85GHz

& Pout=+18dBm

P1dB ~ +26dBm across 5.15 –

5.85 GHz

Total Current ~ 170mA for

Pout=+18dBm at 5.25GHz

Total Current ~ 200mA for

Pout=+20dBm at 5.25GHz

ACPR ~ -48dBc at 30MHz

Offset at Pout=+18dBm

Integrated Power Detector

Complete On-Chip Input Match

Simple Output Capacitor Match

Small Footprint: 3x3mm2

Low Profile: 0.9mm

FCC U-N11 Wireless

IEEE 802.11a

HiperLAN2

ATA

K E Y F E A T U R E S

HEET

LX5506B

Page 1

Related parts for LX5506BLQ

LX5506BLQ Summary of contents

Page 1

... IEEE 802.11a, and HiperLAN2 portable WLAN applications Plastic MLPQ LQ 16-Pin RoHS Compliant / Pb-free LX5506BLQ (i.e. LX5506BLQ-TR) This device is classified as ESD Level 0 in accordance with MIL-STD-883, Appropriate ESD procedures should be Microsemi Integrated Products Division LX5506B RODUCTION ATA HEET ...

Page 2

... Rev. 1.0b, 2005-03-02 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 ® InGaP HBT 4 – 6GHz Power Amplifier P ).................................................6°C/W JC max) .................................................. 150° Description Microsemi Integrated Products Division LX5506B D S RODUCTION ATA HEET ACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish ...

Page 3

... Dim Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Microsemi Integrated Products Division LX5506B RODUCTION ATA HEET MAX. MIN. TYP. MAX. 5.35 5.7 5. 180 90 4.2 20 +/-0.5 +/-0 ...

Page 4

... -10 -15 -20 -25 -30 -35 -40 -45 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Microsemi Integrated Products Division LX5506B RODUCTION ATA HEET EVM Ictotal Pout(dBm) = 2.9V 90mA, Frequency = 5.85GHz, 64QAM / 54 Mbps CQ = 2.9V 90mA, Frequency = 5.25GHz, CW Input ...

Page 5

... PA “ON” 2.7 2.8 2.9 3.0 3.1 3.2 3.3 2.5 = 2.9V REF Microsemi Integrated Products Division LX5506B RODUCTION ATA HEET S21 @ 5.25GHZ 3.1 3.2 3.3 3.4 3.5 Supply Voltage Vc( 2.9V 90mA for Nominal V =-3.3V REF CQ C Icq ∆ ...

Page 6

... Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 ® InGaP HBT 4 – 6GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5506B D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...

Page 7

... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. ...

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