BA15BC0WT-V5 Rohm Semiconductor, BA15BC0WT-V5 Datasheet - Page 7

• Manufacturer Part Number: BA15BC0WT-V5
• Description: Low Dropout (LDO) Regulators
• Manufacturer: Rohm Semiconductor

Specifications of BA15BC0WT-V5

• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 16 V
• Output Voltage: 1.5 V
• Output Type: Fixed
• Output Current: 1 A
• Line Regulation: 35 mV
• Load Regulation: 75 mV
• Voltage Regulation Accuracy: 2 %
• Maximum Power Dissipation: 2 W
• Maximum Operating Temperature: + 105 C
• Mounting Style: Through Hole
• Package / Case: TO-220FP(V5)
• Minimum Operating Temperature: - 40 C
• Reference Voltage: 1.28 V
• Lead Free Status / Rohs Status: Details

10. Overcurrent Protection Circuit
11. Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
7. Regarding input pin of the IC
8. Ground Wiring Pattern
9. Thermal shutdown circuit
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate,
such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing
a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations
caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND
wiring pattern of any external components, either.
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to
shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC
after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued use
of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.
recommended.
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of 1000μF
for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between Vcc and each pin is
Diode for preventing back current flow
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Fig.23 Bypass Diode
Bypass Diode
VCC
Output pin
（PIN A）
（端子 A）
P substrate
P 基板
N
P
＋
Resistor
抵抗
N
P
GND
Fig.24 Example of Simple Bipolar IC Architecture
Parasitic elements
寄生素子
7/9
P
＋
N
（端子 B）
（PIN B）
N
P
＋
C
Transistor (NPN)
トランジスタ(NPN)
B
Ｎ
N
N
E
P substrate
P
GND
Ｐ
P 基板
N
P
＋
Ｎ
(PINB)
GND
(PINA)
GND
B
E
C
GND
Parasitic elements
Parasitic elements or
transistors