AUIRF7416Q International Rectifier, AUIRF7416Q Datasheet

AUIRF7416Q

Manufacturer Part Number

AUIRF7416Q

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRF7416Q.pdf (12 pages)

Specifications of AUIRF7416Q

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

35 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 10 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Gate Charge Qg

61 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7416QTRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 12
Download datasheet (224Kb)

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Features

Description

Specifically designed for Automotive applications, this cel-

lular design of HEXFET® Power MOSFETs utilizes the lat-

est processing techniques to achieve low on-resistance per

silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in Automo-

tive and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-

tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The

thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Thermal Resistance

STG

θJA

) is 25°C, unless otherwise specified.

@ T

Advanced Process Technology

Low On-Resistance

P-Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Automotive Qualified*

= 25°C

= 70°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Power Dissipation

Parameter

AUTOMOTIVE GRADE

@ -10V

Top View

(BR)DSS

DS(on)

-55 to + 150

AUIRF7416Q

HEXFET

Max.

0.02

-7.1

± 20

370

-5.0

-10

-45

2.5

SO-8

max.

Power MOSFET

0.02 Ω

-10A

-30V

mW/°C

Units

°C/W

These are

V/ns

°C

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