2N2222AJAN SEMICOA, 2N2222AJAN Datasheet
2N2222AJAN
Manufacturer Part Number
2N2222AJAN
Description
Manufacturer
SEMICOA
Datasheet
1.2N2222AJAN.pdf
(2 pages)
Specifications of 2N2222AJAN
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
75V
Emitter-base Voltage
6V
Collector Current (dc) (max)
800mA
Dc Current Gain (min)
100
Power Dissipation
500mW
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N2222AJANTX
Manufacturer:
MINI
Quantity:
1 400
Part Number:
2N2222AJANTX
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
2N2222AJANTXV
Manufacturer:
Microsemi
Quantity:
1 400
Copyright 20 10
Rev. N
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N2222AJ)
• JANTX level (2N2222AJX)
• JANTXV level (2N2222AJV)
• JANS level (2N2222AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
• Radiation testing (total dose) upon request
Absolute Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
Derate linearly above 37.5
Operating Junction Temperature
Storage Temperature
Thermal Resistance
2072 for JANTXV and JANS
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
A
Parameter
= 25
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
O
O
C
C
www.SEMICOA.com
Semicoa Corporation
Appendix E
Symbol
V
V
V
R
T
P
I
T
CEO
CBO
EBO
STG
θJA
C
T
J
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-18 metal can
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
Benefits
• Qualification Levels: JAN, JANTX,
• Radiation testing available
MIL-PRF-19500/255
JANTXV and JANS
T
C
-65 to +200
-65 to +200
= 25°C unless otherwise specified
Rating
3.08
800
325
0.5
50
75
6
Silicon NPN Transistor
2N2222A
D a t a S h e e t
mW/°C
°C/W
Volts
Volts
Volts
Unit
mA
°C
°C
W
Page 1 of 1
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Package = TO-18 ;; Level = Jans ;; Vceo (V) = 20 ;; Vcbo (V) = 40 ;; Vebo (V) = 6.0 ;; Ic (A) = 0.20 ;; Power (W) ta = 0.36 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.20
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Package = Cersot ;; Level = Jans ;; Vceo (V) = 80 ;; Vcbo (V) = 140 ;; Vebo (V) = 7.0 ;; Ic (A) = 1.00 ;; Power (W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20
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2N2222AJAN Summary of contents
Page 1
... JANS level (2N2222AJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage ...
Page 2
... OBO 100 kHZ < f < 1 MHz V = 0.5 Volts mA IBO 100 kHZ < f < 1 MHz t off t on Semicoa Corporation www.SEMICOA.com 2N2222A Silicon NPN Transistor characteristics specified at T Min Typ Max Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min ...