SI3232-G-FQ Silicon Laboratories Inc, SI3232-G-FQ Datasheet - Page 81

IC SLIC PROG DUAL-CH 64TQFP

SI3232-G-FQ

Manufacturer Part Number
SI3232-G-FQ
Description
IC SLIC PROG DUAL-CH 64TQFP
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI3232-G-FQ

Function
Subscriber Line Interface Concept (SLIC)
Interface
ISDN
Number Of Circuits
2
Voltage - Supply
3.13 V ~ 3.47 V
Current - Supply
28mA
Power (watts)
280mW
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
Price
Part Number:
SI3232-G-FQ
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Part Number:
SI3232-G-FQR
Manufacturer:
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Quantity:
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POLREV: Polarity Reversal Settings (Register Address 7)
(Register type: Initialization)
Reset settings = 0x00
RAMADDR: RAM Address (Register Address 103)
(Register type: Operational/single value instance for both channels)
Reset settings = 0x00
Name
Name
Type
Type
Bit
7:4
Bit
7:0
Bit
3
2
1
0
Bit
RAMADDR[7:0] RAM Data—Low Byte.
VOCZERO
Reserved
POLREV
RAMP
Name
PREN
Name
D7
D7
D6
D6
Read returns zero.
Polarity Reversal Status.
0 = Forward polarity.
1 = Reverse polarity.
Wink Function Control.
Enables a wink function by decrementing the open circuit voltage to zero.
0 = Maintain current V
1 = Decrement V
Smooth Polarity Reversal Enable.
0 = Disabled.
1 = Enabled.
Smooth Polarity Reversal Ramp Rate.
0 = 1 V/1.25 ms ramp rate.
1 = 2 V/1.25 ms ramp rate.
A write to RAMDAT followed by a write to RAMADDR places the contents of RAMDAT
into a RAM location specified by the RAMADDR at the next memory update (WRITE
operation). Writing RAMADDR loads the data stored in RAMADDR into RAMDAT only at
the next memory update (READ operation).
D5
D5
OC
voltage to 0 V.
Preliminary Rev. 0.96
OC
D4
RAMADDR[7:0]
D4
value.
R/W
POLREV
D3
D3
R
Function
Function
VOCZERO
D2
R/W
D2
D1
PREN
R/W
D1
D0
RAMP
R/W
Si3232
D0
81

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