QM100DY-HB MITSUBISHI, QM100DY-HB Datasheet
QM100DY-HB
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QM100DY-HB Summary of contents
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... E2 C1 C2E1 80± 0.25 (12) (12) (12) 3–M5 LABEL MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE • I Collector current ........................ 100A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 17.5 1.3 9.5 20 ...
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... CE V =300V, I =100A, I =0.2A, –I =2. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 100 100 620 6 1000 –40~+150 – ...
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... BASE CURRENT ( 2.8 3.2 3.6 ( =150A C I =100A – (A) B MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° COLLECTOR CURRENT I (A) C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL BE(sat CE(sat) 7 ...
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... REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0 COLLECTOR-EMITTER REVERSE VOLTAGE QM100DY-HBK INSULATED TYPE I =–2.0A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 0.8 1.2 1.6 2.0 –V (V) CEO Feb.1999 ...
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... TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 1.0 0.8 0.6 0.4 0.2 0 –3 –2 – TIME (s) MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL =300V =0. –I =2. =25° =125° – FORWARD CURRENT QM100DY-HBK INSULATED TYPE – (A) F Feb.1999 ...