QM75CY-H MITSUBISHI, QM75CY-H Datasheet

no-image

QM75CY-H

Manufacturer Part Number
QM75CY-H
Description
75A - transistor module for medium power switching use, insulated type
Manufacturer
MITSUBISHI
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QM75CY-H
Manufacturer:
MITSUBISHI
Quantity:
57
Part Number:
QM75CY-H
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
QM75CY-H
Quantity:
60
APPLICATION
UPS, CVCF
QM75CY-H
OUTLINE DRAWING & CIRCUIT DIAGRAM
(7)
M5
C
2
20
LABEL
E
94
80
1
E
2
20
C
12
1
27
B
E
B
E
2
2
1
1
(7)
Tab#110,
t=0.5
6.5
• I
• V
• h
• Insulated Type
• UL Recognized
C
2
C
FE
CEX
MITSUBISHI TRANSISTOR MODULES
Yellow Card No. E80276 (N)
Collector current .......................... 75A
Collector-emitter voltage ........... 600V
DC current gain............................... 75
HIGH POWER SWITCHING USE
E
1
File No. E80271
E
2
QM75CY-H
INSULATED TYPE
Dimensions in mm
B
E
C
E
B
2
1
2
1
1
Feb.1999

Related parts for QM75CY-H

QM75CY-H Summary of contents

Page 1

... APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM 94 ( LABEL MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE • I Collector current .......................... 75A C • V Collector-emitter voltage ........... 600V CEX • current gain............................... 75 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 ( ...

Page 2

... V =2V EB =2V =25 C Test conditions =600V, V =2V EB =600V, Emitter open =7V =75A, I =1A B =75A (diode forward voltage) C =50A, V =2V/5V CE =300V, I =75A, I =–I =1. QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 600 V 600 V 600 350 W 4.5 A 750 A –40~+150 C –40~+125 ...

Page 3

... COLLECTOR CURRENT I BE SWITCHING TIME VS. COLLECTOR =100A =75A =50A – (A) COLLECTOR CURRENT I B QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. V =5. =2. =25° =125° (A) C SATURATION VOLTAGE V CE(sat =25° =125° (A) C CURRENT (TYPICAL) V =300V CC I =–I =1 ...

Page 4

... REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 1.2 COLLECTOR-EMITTER REVERSE VOLTAGE –V (V) CEO QM75CY-H INSULATED TYPE I =–2A B2 –5A 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 100 120 140 160 ( =25° =125°C j 1.6 2.0 Feb.1999 ...

Page 5

... TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE 2.0 1.6 1.2 0.8 0 –3 10 –2 10 – TIME (s) MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL =300V =–I =1. =25° =125° FORWARD CURRENT I 0 QM75CY-H INSULATED TYPE – (A) F Feb.1999 ...

Related keywords