BCR16HM MITSUBISHI, BCR16HM Datasheet
BCR16HM
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BCR16HM Summary of contents
Page 1
... MAX 21.6 MAX 30.0±0 TERMINAL 1 7.0 7 TERMINAL 2 3 GATE TERMINAL 8.25 1.55( 6. GATE TERMINAL 1.5 INDICATION LOT No. VOLTAGE Tb TEST POINT CLASS BCR16HM (C TYPE) Unit 12 600 V 720 V Ratings Unit 16 A 170 A 2 121 0 –40 ~ +125 C –40 ~ +125 C 15 kg·cm 1.47 N· ...
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... V =400V D 200 T = 25°C b 180 160 140 120 100 2.8 3.2 3.6 4.0 4.4 10 MITSUBISHI SEMICONDUCTOR TRIAC BCR16HM MEDIUM POWER USE Limits Min. Typ. Max. — — 3.0 — — 1.6 — — 1.5 — — 1.5 — — 1.5 — ...
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... CONDUCTION TIME (CYCLES AT 60Hz) ALLOWABLE BASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS RMS ON-STATE CURRENT (A) BCR16HM MEDIUM POWER USE TYPICAL EXAMPLE 100 120 140 Feb.1999 ...
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... JUNCTION TEMPERATURE (°C) COMMUTATION CHARACTERISTICS 10 2 TYPICAL 7 EXAMPLE 125° 500µ 200V 3Hz MINIMUM 4 CHARAC- 3 TERISTICS 2 VALUE RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) BCR16HM MEDIUM POWER USE 100 120 140 TYPICAL EXAMPLE 100120 140 III QUADRANT I QUADRANT Feb.1999 ...
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... GATE CURRENT PULSE WIDTH 10 3 TYPICAL EXAMPLE FGT RGT I I RGT III GATE CURRENT PULSE WIDTH (µs) MITSUBISHI SEMICONDUCTOR TRIAC INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS TEST PROCEDURE 1 TEST PROCEDURE TEST PROCEDURE 3 BCR16HM MEDIUM POWER USE Feb.1999 ...