QM200DY-HB MITSUBISHI, QM200DY-HB Datasheet

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QM200DY-HB

Manufacturer Part Number
QM200DY-HB
Description
HIGH POWER SWITCHING USE INSULATED TYPE
Manufacturer
MITSUBISHI
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
QM200DY-HB
Manufacturer:
MITSUBISHI
Quantity:
57
Part Number:
QM200DY-HB
Manufacturer:
MIT
Quantity:
20 000
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM200DY-HB
OUTLINE DRAWING & CIRCUIT DIAGRAM
5
B
8
2
X
23.5
C
18 5 18 5 18
2
E
1
23
LABEL
108
14
93
E
2
23
C
1
3-M6
8 5
Tab#110, t=0.5
B
E
E
B
2
2
1
1
6.5
• I
• V
• h
• Insulated Type
• UL Recognized
C
B
2
E
1
C
X
1
FE
B
CEX
2
X
MITSUBISHI TRANSISTOR MODULES
Yellow Card No. E80276 (N)
Collector current ........................ 200A
Collector-emitter voltage ........... 600V
DC current gain............................. 750
QM200DY-HB
HIGH POWER SWITCHING USE
File No. E80271
E
2
INSULATED TYPE
Dimensions in mm
C
E
B
B
E
1
2
1
1
2
Feb.1999

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QM200DY-HB Summary of contents

Page 1

... Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 23 108 LABEL MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE • I Collector current ........................ 200A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 3- ...

Page 2

... CE V =300V, I =200A, I =400mA, –I = Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 200 200 1240 12 2000 –40~+150 – ...

Page 3

... BASE CURRENT ( =25° =2.5V CE 3.4 3.8 4.2 ( =300A C I =200A C T =25° =125° (A) B MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° COLLECTOR CURRENT I (A) C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ...

Page 4

... CASE TEMPERATURE T REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM200DY-HB INSULATED TYPE I =–3. =–10A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 1.2 1.6 2.0 2.4 – ...

Page 5

... TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE 0.40 0.32 0.24 0.16 0. –3 10 –2 10 – TIME (s) MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL FORWARD CURRENT QM200DY-HB INSULATED TYPE =300V CC I =400mA – =– =25° =125° (A) F Feb.1999 ...

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