SI5404DC Vishay, SI5404DC Datasheet
SI5404DC
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SI5404DC Summary of contents
Page 1
... 0.045 @ 1206-8 ChipFETr Bottom View Ordering Information: Si5404DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si5404DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... T = 150_C 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71057 S-31989—Rev. C, 13-Oct-03 1800 1500 1200 25_C J 0.8 1.0 1.2 Si5404DC Vishay Siliconix Capacitance C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 ...
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... Si5404DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...