FA57SA50

Manufacturer Part NumberFA57SA50
ManufacturerVishay Semiconductors
FA57SA50 datasheet
 
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SOT-227
PRODUCT SUMMARY
V
DSS
R
DS(on)
I
D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
10 V
GS
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
= 25 Ω, I
(2)
Starting T
= 25 °C, L = 446 µH, R
J
g
≤ 57 A, dI/dt ≤ 200 A/µs, V
≤ V
(3)
I
SD
DD
(BR)DSS
Document Number: 94548
Revision: 31-Jul-08
®
HEXFET
Power MOSFET, 57 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Totally lead (Pb)-free
• Designed for industrial level
DESCRIPTION
500 V
Third Generation HEXFET
0.08 Ω
HPP provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance and
57 A
cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance throughout
the industry.
SYMBOL
TEST CONDITIONS
T
= 25 °C
C
I
D
T
= 100 °C
C
(1)
I
DM
P
T
= 25 °C
D
C
V
GS
(2)
E
AS
(1)
I
AR
(1)
E
AR
(3)
dV/dt
T
, T
J
Stg
V
ISO
M4 screw
= 57 A (see fig. 12)
AS
≤ 150 °C
, T
J
For technical questions, contact: ind-modules@vishay.com
FA57SA50LCP
Vishay High Power Products
RoHS
COMPLIANT
®
Power MOSFETs from Vishay
MAX.
UNITS
57
36
A
228
625
W
5.0
W/°C
± 20
V
725
mJ
57
A
62.5
mJ
10
V/ns
- 55 to + 150
°C
2.5
kV
1.3
Nm
www.vishay.com
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FA57SA50 Summary of contents