MMBT8550 Semtech Corporation, MMBT8550 Datasheet
MMBT8550
Manufacturer Part Number
MMBT8550
Description
Manufacturer
Semtech Corporation
Datasheet
1.MMBT8550.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT8550
Manufacturer:
ST/先科
Quantity:
20 000
Company:
Part Number:
MMBT8550 B9C
Manufacturer:
ON
Quantity:
5 000
Part Number:
MMBT8550 B9C
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBT8550-1.5A
Manufacturer:
ST/先科
Quantity:
20 000
Part Number:
MMBT8550-2A
Manufacturer:
ST/先科
Quantity:
20 000
Part Number:
MMBT8550C
Manufacturer:
ST/先科
Quantity:
20 000
MMBT8550W (1.5A)
for switching and amplifier applications
Absolute Maximum Ratings (T
Characteristics at T
PNP Silicon Epitaxial Planar Transistor
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Base Cutoff Current
Collector Emitter Cutoff Current
Emitter Base Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Emitter Voltage
Emitter Base Voltage
Collector Base Voltage
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
DC Current Gain
at -I
at -I
at -I
at -V
at -V
at -V
at -I
at -I
at -V
at -V
at -V
C
C
E
C
C
CB
CE
EB
CE
CE
= 100 µA
CE
= 100 µA
= 100 µA
= 800 mA, -I
= 800 mA, -I
= 40 V
= 20 V
= 5 V
= 10 V, -I
= 1 V, -I
= 1 V, -I
®
C
C
SEMTECH ELECTRONICS LTD.
C
(Subsidiary of Sino-Tech International Holdings Limited, a company
= 100 mA
= 800 mA
a
B
B
= 50 mA, f = 30 MHz
= 25
= 80 mA
= 80 mA
listed on the Hong Kong Stock Exchange, Stock Code:
Parameter
Parameter
O
C
a
= 25
O
C)
MMBT8550CW
MMBT8550DW
Symbol
-V
-V
-V
-V
-V
-I
-I
-I
Symbol
h
h
h
CE(sat)
BE(sat)
724)
CBO
CEO
EBO
f
-V
-V
-V
CBO
CEO
EBO
FE
FE
FE
T
-I
P
T
T
CBO
CEO
EBO
CM
tot
S
j
Min.
100
160
100
40
40
25
5
-
-
-
-
-
- 55 to + 150
Value
200
150
1.5
40
25
5
Max.
250
400
100
100
100
0.5
1.2
-
-
-
-
-
Dated : 11/08/2006
Unit
mW
O
O
V
V
V
A
C
C
MHz
Unit
nA
nA
nA
V
V
V
V
V
-
-
-
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MMBT8550 Summary of contents
Page 1
... MMBT8550W (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (T a Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics Parameter DC Current Gain ...
Page 2
... MMBT8550W (1.5A) Static Characteristic -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.4 -0.8 V (V), COLLECTOR-EMITTR VOLTAGE CE Base -Emittr Saturation Voltage Collector-Emitter Saturation Voltage -10000 V BE(sat) -1000 -100 V CE(sat) -10 -0 (mA), COLLECTOR CURRENT C Current Gain Bandwidth Product 1000 100 10 -1 -10 I (mA), COLLECTOR CURRENT C SEMTECH ELECTRONICS LTD. ...