KM4132G271BQ-10 Samsung, KM4132G271BQ-10 Datasheet
KM4132G271BQ-10
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KM4132G271BQ-10 Summary of contents
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... KM4132G271B 128K x 32bit x 2 Banks Synchronous Graphic RAM Samsung Electronics reserves the right to change products or specification without notice. 8Mbit SGRAM LVTTL Revision 2.4 May 1998 - 1 - CMOS SGRAM Rev. 2.4 (May 1998) ...
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KM4132G271B Revision History Revision 2.4 (May 1998) • Added KM4132G271B-7 product(143MHz @ CL =3). Revision 2.3 (March 1998) • Added Reverse Type Package in ODERING INFORMATION and PIN CONFIGURATION. • Removed KM4132G271B-H/12 product(-H : 100MHz @ CL =2, -12 : ...
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... Write per bit and 8 columns block write improves performance in graphics systems. ORDERING INFORMATION Part NO. KM4132G271BQ(R)-7 KM4132G271BQ(R)-8 KM4132G271BQ(R)-10 KM4132G271BTQ(R)-7 KM4132G271BTQ(R)-8 KM4132G271BTQ(R)-10 * ~G271BQR# / ~G271BTQR# : Reverse Type Package MASK REGISTER COLOR ...
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KM4132G271B PIN CONFIGURATION (TOP VIEW) Forward Type DQ29 SSQ DQ30 83 DQ31 N.C 86 N.C 87 N.C 88 N.C 89 N.C 90 N.C 91 N.C 92 N.C 93 N ...
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KM4132G271B PIN CONFIGURATION DESCRIPTION PIN NAME CLK System Clock CS Chip Select CKE Clock Enable Address (BA) Bank Select Address 9 RAS Row Address Strobe CAS Column Address Strobe WE Write Enable DQMi Data ...
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KM4132G271B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. ...
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KM4132G271B DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating Current I CC1 (One Bank Active CC2 Precharge Standby Current in power-down mode I PS CC2 I N CC2 Precharge Standby Current in non power-down ...
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KM4132G271B AC OPERATING TEST CONDITIONS Parameter AC input levels Input timing measurement reference level Input rise and fall time(See note 3) Output timing measurement reference level Output load condition 3.3V 1200 Output 870 (Fig Output Load Circuit AC ...
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KM4132G271B OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to new col. address delay Last data ...
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KM4132G271B SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Special Mode Register Set Refresh Auto Refresh Entry Self Refresh Exit Bank Active Write Per Bit Disable & Row Addr. Write Per Bit Enable Read & Auto Precharge Disable Column Address ...
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KM4132G271B SIMPLIFIED TRUTH TABLE 3. Auto refresh functions as same as CBR refresh of DRAM. The automatical precharge without Row precharge command is meant by "Auto". Auto/Self refresh can be issued only at both precharge state Bank ...
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KM4132G271B MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address Function W.B.L TM (Note 1) Test Mode A A Type Mode Register Set Vendor ...
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KM4132G271B BURST SEQUENCE (BURST LENGTH = 4) Initial address BURST SEQUENCE (BURST LENGTH = 8) Initial address ...
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KM4132G271B DEVICE OPERATIONS CLOCK (CLK) The clock input is used as the reference for all SGRAM opera- tions. All operations are synchronized to the positive going edge of the clock. The clock transitions must be monotonic between V and V ...
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KM4132G271B DEVICE OPERATIONS BANK ACTIVATE The bank activate command is used to select a random row in an idle bank. By asserting low on RAS and CS with desired row and bank addresses, a row access is initiated. The read ...
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KM4132G271B DEVICE OPERATIONS (Continued) Entry to Power Down, Auto refresh, Self refresh and Mode reg- ister Set etc. is possible only when both banks are in idle state. AUTO PRECHARGE The precharge operation can also be performed by using auto ...
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KM4132G271B DEVICE OPERATIONS (Continued) WRITE PER BIT Write per bit(i.e. I/O mask mode) for SGRAM is a function that selectively masks bits of data being written to the devices. The mask is stored in an internal register and applied to ...
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KM4132G271B SUMMARY OF 1M Byte SGRAM BASIC FEATURES AND BENEFITS Features 128K SGRAM Interface Bank Page Depth / 1 Row Total Page Depth Burst Length(Read Full Page Full ...
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KM4132G271B BASIC FEATURE AND FUNCTION DESCRIPTIONS 1. CLOCK Suspend 1) Clock Suspended During Write (BL=4) CLK CMD WR CKE Internal CLK DQ(CL2 DQ(CL3 Note : CKE to CLK disable/enable=1 clock 2. DQM ...
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KM4132G271B 3. CAS Interrupt (I) 1) Read interrupted by Read (BL=4) CLK CMD ADD DQ(CL2 DQ(CL3) t CCD Note 2 2) Write interrupted by(Block) Write (BL=2) CLK CMD CCD Note 2 ...
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KM4132G271B 4. CAS Interrupt (II) : Read Interrupted by Write & DQM (1) CL=2, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ iii) CMD RD DQM DQ iv) CMD RD DQM DQ (2) CL=3, BL=4 CLK ...
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KM4132G271B 5. Write Interrupted by Precharge & DQM CLK CMD WR DQM *Note : 1. To inhibit invalid write, DQM should be issued. 2. This precharge command and burst write command should be of the ...
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KM4132G271B 8. Burst Stop & Precharge Interrupt 1) Write Interrupted by Precharge (BL=4) CLK WR CMD DQM Read Interrupted by Precharge (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) 9. MRS & SMRS 1) Mode Register ...
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KM4132G271B 10. Clock Suspend Exit & Power Down Exit 1) Clock Suspend (=Active Power Down) Exit CLK CKE Internal Note 1 CLK CMD 11. Auto Refresh & Self Refresh Note 3 1) Auto Refresh CLK Note 4 CMD PRE CKE ...
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KM4132G271B 12. About Burst Type Control Sequential Counting Basic MODE Interleave Counting Pseudo- Decrement Sequential Counting Pseudo- MODE Pseudo- Binary Counting Random column Access Random t MODE = 1 CLK CCD 13. About Burst Length Control 1 2 Basic 4 ...
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KM4132G271B 14. Mask Functions 1) Normal Write I/O masking : By Mask at Write Per Bit Mode, the selected bit planes keep the original data. If bit plane 15, 22, 24, and 31 keep the original ...
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KM4132G271B (Continued) Pixel and I/O masking : By Mask at Write Per Bit Mode, the selected bit planes keep the original data. By Pixel Data issued through DQ pin, the selected pixels keep the original data. See PIXEL TO DQ ...
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KM4132G271B Power On Sequence & Auto Refresh CLOCK CKE High level is necessary CS tRP RAS CAS ADDR DSF DQM High level is necessary High-Z DQ Precharge Auto ...
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KM4132G271B Single Bit Read-Write-Read Cycle(Same Page) @CAS Latency=3, Burst Length CLOCK t CC CKE *Note RCD t SH RAS CAS ADDR Ra ...
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KM4132G271B *Note : 1. All input can be don't care when CS is high at the CLK high going edge. 2. Bank active & read/write are controlled Enable and disable auto precharge function ...
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KM4132G271B Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS t RCD RAS CAS ADDR Ra Ca0 DSF DQM DQ (CL=2) t RAC *Note 3 DQ ...
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KM4132G271B Page Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS t RCD RAS CAS ADDR Ra Ca0 DSF DQM DQ (CL=2) DQ (CL=3) Row Active ...
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KM4132G271B Block Write cycle(with Auto Precharge CLOCK CKE CS RAS CAS *Note 2 RAa CAa ADDR A 9 RAa DSF t DQM *Note 1 Pixel DQ Mask Row Active with Masked Write-per-Bit ...
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KM4132G271B SMRS and Block/Normal Write @ Burst Length CLOCK CKE CS RAS CAS A RAa 0-2 A RAa 3,4,7 A RAa 5 A RAa RAa DSF DQM I/O DQ ...
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KM4132G271B Page Read Cycle at Different Bank @Burst Length CLOCK CKE *Note 1 CS RAS CAS ADDR RAa CAa RAa 8 WE DSF DQM DQ (CL=2) DQ (CL=3) Row Active Row Active ...
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KM4132G271B Page Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS RAa Key CAa ADDR RAa 8 WE DSF DQM DQ Mask DAa0 Load Mask Register Row Active with ...
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KM4132G271B Read & Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS ADDR RAa CAa RAa 8 WE DSF DQM DQ (CL=2) DQ (CL=3) Row Active Read (A-Bank) (A-Bank) ...
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KM4132G271B Read & Write Cycle with Auto Precharge I @Burst Length CLOCK CKE CS RAS CAS ADDR RAa RBb RAa RBb 8 WE DSF DQMi DQ (CL=2) DQ (CL=3) Row Active (A-Bank) ...
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KM4132G271B Read & Write Cycle with Auto Precharge II @Burst Length CLOCK CKE CS RAS CAS ADDR DSF DQM DQ (CL=2) DQ (CL=3) Read with Row Active (A-Bank) ...
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KM4132G271B Read & Write Cycle with Auto Precharge III @Burst Length CLOCK CKE CS RAS CAS ADDR DSF DQM DQ (CL=2) DQ (CL=3) Row Active Auto Precharge (A-Bank) *Note : ...
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KM4132G271B Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Full page Only CLOCK CKE CS RAS CAS RAa CAa ADDR A 9 *Note 1 A RAa 8 WE DSF DQM DQ (CL=2) DQ ...
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KM4132G271B Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Full page Only CLOCK CKE CS RAS CAS ADDR RAa CAa A 9 *Note 1 RAa DSF DQM DQ DAa0 ...
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KM4132G271B Burst Read Single bit Write Cycle @Burst Length=2, BRSW CLOCK *Note 1 CKE CS RAS CAS ADDR RAa CAa RAa 8 WE DSF DQM DQ DAa0 (CL=2) DAa0 DQ (CL=3) Row ...
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KM4132G271B Clock suspension & DQM operation cycle @CAS Latency=2, Burst Length CLOCK CKE CS RAS CAS ADDR DSF DQM DQ Row Active Read *Note : 1. DQM ...
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KM4132G271B Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length ¡ ó CLOCK ¡ ó *Note 1 CKE *Note 3 ¡ ó CS ¡ ó ¡ ó RAS ¡ ó ¡ ó CAS ¡ ...
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KM4132G271B Self Refresh Entry & Exit Cycle CLOCK *Note 2 *Note 1 CKE RAS *Note 7 CAS ADDR DSF DQM DQ Hi-Z Self Refresh Entry *Note : ...
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KM4132G271B Mode Register Set Cycle CLOCK HIGH CKE CS *Note 2 RAS *Note 1 CAS *Note 3 ADDR Key Ra WE DSF DQM DQ Hi-Z MRS New Command * Both banks precharge should be completed ...
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KM4132G271B FUNCTION TRUTH TABLE(TABLE 1) Current CS RAS CAS State IDLE ...
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KM4132G271B FUNCTION TRUTH TABLE(TABLE 1, Continued) Current CS RAS CAS State Write Read with L H Auto L H Precharge ...
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KM4132G271B FUNCTION TRUTH TABLE (TABLE 1, Continued) ABBREVIATIONS RA = Row Address NOP = No Operation Command *Note : 1. All entries assume that CKE was active(High) during the preceding clock cycle and the current clock ...
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KM4132G271B PACKAGE DIMENSIONS (TQFP) 17.20 14.00 #100 #1 0.825 * All Package Dimensions of PQFP & TQFP are same except Height. - PQFP (Height = 3.0mmMAX) - TQFP (Height = 1.2mmMAX) 0.20 0.10 23.20 0.20 20.00 0.10 0.30 0.65 0.08 ...