2SK2503 Rohm, 2SK2503 Datasheet

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2SK2503

Manufacturer Part Number
2SK2503
Description
N-channel MOSFET small switching transistor
Manufacturer
Rohm
Datasheet

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Transistors
4V Drive Nch MOS FET
2SK2503
Silicon N-channel MOS FET
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Type
2SK2503
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25 °C )
Channel temperature
Storage temperature
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Reverse drain
current
Pw
10µs, Duty cycle
Package
Code
Basic ordering unit (pieces)
Parameter
1%
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Taping
I
Tch
I
I
DRP
P
2500
GSS
I
DSS
DP
DR
D
D
TL
−55 to +150
Limits
± 20
150
60
20
20
20
5
5
Unit
°C
°C
External dimensions (Unit : mm)
Inner circuit
(1) Gate
(2) Drain
(3) Source
W
V
V
A
A
A
A
(1)Gate
(2)Drain
(3)Source
CPT3
(1)
Abbreviated symbol : K2503
0.75
0.9
(1)
2.3
(2)
6.5
5.1
(2)
(3)
0.65
2.3
Rev.A
(3)
2SK2503
2.3
0.5
0.5
1.0
1/5

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2SK2503 Summary of contents

Page 1

... Inner circuit Taping TL 2500 (1) Gate (2) Drain (3) Source Symbol Limits Unit DSS V ± GSS ∗ ∗ DRP °C Tch 150 −55 to +150 °C Tstg 2SK2503 6.5 5.1 2.3 0.5 0.75 0.65 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 Abbreviated symbol : K2503 (1) (2) (3) Rev.A 1/5 ...

Page 2

... C 100 pF rss − − t 5.0 ns d(on) − − − − d(off) − − 2SK2503 Test Conditions = ± 20V =1mA =60V =10V, I =1mA =2.5A, V =10V =2.5A ...

Page 3

... Resistance vs. Drain Current ( Ι ) Fig.5 0 Pulsed 0.5 0.4 0.3 0.2 = 2.5A 0.1 0 −50 − 100 125 150 CHANNEL TEMPERATURE : Tch Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 2SK2503 10 = 10V V DS Pulsed 5 Ta=125°C 75°C 2 25°C −25°C 1 0.5 0.2 0.1 0.05 0.02 0. (V) GATE-SOURCE VOLTAGE : V Fig ...

Page 4

... REVERSE DRAIN CURRENT : I DR Fig.14 Reverse Recovery Time vs. Reverse Drain Current Tc=25°C θ θ (t)=r (t) th(ch-c) th (ch-c) θ =6.25°C/W th(ch- 100m 1 10 2SK2503 10000 5000 2000 1000 500 200 100 1.5 0.1 0.2 0 (V) DRAIN-SOURCE VOLTAGE : V Fig.12 Typical Capacitance vs. Drain-Source Voltage ...

Page 5

... Transistors Switching characteristics measurement circuit D.U. Fig.15 Switching Time Test Circuit Pulse Width 90% 50 10 d(on d(off off Fig.16 Switching Time Waveforms 2SK2503 50% 10% 90 Rev.A 5/5 ...

Page 6

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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