M5M51008BP-55LL Mitsumi Electronics, Corp., M5M51008BP-55LL Datasheet
M5M51008BP-55LL
Related parts for M5M51008BP-55LL
M5M51008BP-55LL Summary of contents
Page 1
... DESCRIPTION The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application ...
Page 2
... A11 Pin numbers inside dotted line show those of TSOP 2 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM When setting and OE non-selectable mode in which both reading and writing are 1 2 disabled. In this mode, the output stage high- impedance ...
Page 3
... Input capacitance C I Output capacitance C O Note 1: Direction for current flowing into positive (no mark). 2: Typical value is Vcc = 5V 25°C 3 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM Conditions With respect to GND Ta=25°C (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted) Test conditions I = 0.5mA – ...
Page 4
... Output disable time from W low dis(W) t Output disable time from OE high dis(OE) t Output enable time from W high en(W) t en(OE) Output enable time from OE low 4 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted dis , dis Min ...
Page 5
... S 2 (Note 3) OE (Note "H" level Write cycle (W control mode (Note (Note 1~8 5 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM a( (S1) (Note (S2 (OE (OE (S1 (S2 (S1) ...
Page 6
... Note 3: Hatching indicates the state is "don't care". 4: Writing is executed while S 5: When the falling edge simultaneously or prior to the falling edge rising edge Don't apply inverted phase signal externally when DQ pin is output mode. 6 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM ...
Page 7
... Power down recovery time rec (PD) (3) POWER DOWN CHARACTERISTICS S control mode 2. control mode 0.2V 7 M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM (Ta = 0~70°C, unless otherwise noted) Test conditions 2.2V Vcc(PD) 2V Vcc(PD) 2.2V 4.5V Vcc(PD) Vcc(PD) < 4. 0.2V, other inputs = 0~ 0.2V,S ...