M5M44800CJ-7S Mitsumi Electronics, Corp., M5M44800CJ-7S Datasheet

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M5M44800CJ-7S

Manufacturer Part Number
M5M44800CJ-7S
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M5M44800CJ-7S
Manufacturer:
MIT
Quantity:
20 000
1
DESCRIPTION
FEATURES
XX=J,TP
M5M44800CJ,TP-5,-5S:Under development
This is a family of 524288-word by 8-bit dynamic RAMs, fabricated
with the high performance CMOS process, and is ideal for large-
capacity memory systems where
dissipation, and low costs are essential.
single-transistor dynamic storage stacked capacitor cell provide
high circuit density at reduced costs. Multiplexed address inputs
permit both a reduction in pins and an increase in system
densities. Self or extended refresh current is low enough for
battery back-up application.
APPLICATION
Microcomputer memory, Refresh memory for CRT
PIN DESCRIPTION
The use of double-layer metalization process technology and a
Standard 28pin SOJ, 28pin TSOP (II)
Single 5V±10% supply
Low stand-by power dissipation
Operating power dissipation
Self refresh capability *
Extended refresh capability
Fast page mode(1024-column random access),Read-modify-write,
RAS-only refresh, CAS before RAS refresh, Hidden refresh
capabilities.
Early-write mode, CAS and OE to control output buffer impedance
1024 refresh cycles every 16.4ms (A
1024 refresh cycles every 128ms (A
* :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S
M5M44800CXX-5,-5S
M5M44800CXX-6,-6S
M5M44800CXX-7,-7S
A
DQ
RAS
CAS
W
OE
Vcc
Vss
Pin name
0
Type name
~A
CMOS lnput level
CMOS Input level
M5M44800Cxx-5,-5S
M5M44800Cxx-6,-6S
M5M44800Cxx-7,-7S
Self refresh current
Extended refresh current
:option) only
1
~DQ
9
8
Address inputs
Data inputs/outputs
Row address strobe input
Column address strobe input
Write control input
Output enable input
Power supply (+5V)
Ground (0V)
(max.ns)
access
RAS
time
50
60
70
Function
(max.ns)
access
CAS
time
13
15
20
(max.ns)
Address
access
0
time
25
30
35
0
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
~A
high speed,
~A
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
9
9
) *
(max.ns)
)
access
time
OE
13
15
20
(min.ns)
Cycle
time
110
130
495mW (Max)
413mW (Max)
358mW (Max)
5.5mW (Max)
550µW (Max) *
90
low
150µA(Max)
150µA(Max)
(typ.mW)
M5M44800CJ,TP-5,-6,-7,
dissipa-
Power
power
tion
450
375
325
M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S
PIN CONFIGURATION (TOP VIEW)
Outline 28P3Y-H(400mil TSOP Normal Bend)
(5V)V
(5V)V
(5V)V
(5V)V
DQ
DQ
DQ
RAS
DQ
DQ
DQ
RAS
DQ
DQ
Outline 28P0K(400mil SOJ)
NC
NC
CC
W
A
CC
CC
W
A
CC
A
A
A
A
A
A
A
A
9
9
1
2
3
0
1
2
3
1
2
3
0
1
2
3
4
4
10
11
12
13
13
14
10
11
12
13
13
14
6
6
1
2
3
4
5
7
1
2
3
4
5
7
8
9
8
9
-5S,-6S,-7S
MITSUBISHI LSIs
MITSUBISHI LSIs
26
22
19
18
17
16
15
26
22
19
18
17
16
15
28
27
25
24
23
21
20
28
27
25
24
23
21
20
NC:NO CONNECTION
V
DQ
DQ
DQ
DQ
A
A
A
A
A
V
V
DQ
DQ
DQ
DQ
A
A
A
A
A
V
CAS
OE
NC
CAS
OE
NC
SS
8
7
6
5
4
SS
SS
8
7
6
5
4
SS
7
6
5
7
6
5
8
8
(0V)
(0V)
(0V)
(0V)

Related parts for M5M44800CJ-7S

M5M44800CJ-7S Summary of contents

Page 1

... RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities. Early-write mode, CAS and OE to control output buffer impedance 1024 refresh cycles every 16.4ms (A 1024 refresh cycles every 128ms (A * :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S :option) only APPLICATION Microcomputer memory, Refresh memory for CRT PIN DESCRIPTION ...

Page 2

... FUNCTION In addition to normal read, write, and read-modify-write operations the M5M44800CJ, TP provides a number of other functions, e.g., Table 1 Input conditions for each mode Operation Read Write (Early write) Write (Delayed write) Read-modify-write RAS only refresh Hidden refresh CAS before RAS (Extended *) refresh Self refresh ...

Page 3

... I are dependent on output loading. Specified values are obtained with the output open. CC1 (AV) CC4 (AV) Note 5: Column address can be changed once or less while RAS=V M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Conditions With respect Ta=25˚C (Ta=0~70˚ ...

Page 4

... CP CP(max) ASC t t Note12: , defines the time at which the output achieves the high impedance state (I OFF(max) OEZ(max OL(max) 4 M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM =0V, unless otherwise noted) SS Test conditions f=1MHz V =25mVrms I (Ta=0~70˚ 5V± ...

Page 5

... CAS hold time after OE low t RAS hold time after OE low ORH t t Note 21: Either or must be satisfied for a read cycle. RCH RRH 5 M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Parameter M5M44800C-5,-5S M5M44800C-6,-6S (Note 15) (Note 16) (Note 17) (Note 18) (Note 18) (Note 19) (Note 19) ...

Page 6

... DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the DQ (at access time and until CAS or OE goes back M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM ...

Page 7

... CBR self refresh RAS low pulse width t RPS CBR self refresh RAS high precharge time t CBR self refresh CAS hold time CHS 7 M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Parameter M5M44800C-5,-5S M5M44800C-6,-6S Min 35 71 (Note 25) ...

Page 8

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t CSH t RCD t RAD RAH ASC CAH ROW COLUMN ADDRESS ADDRESS t RCS t DZC t CAC ...

Page 9

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t CSH t RCD t t ASC t CAH RAH ROW COLUMN ADDRESS t WCS t WCH DATA VALID ...

Page 10

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t CSH t RCD t t ASC RAH ROW COLUMN ADDRESS ADDRESS t RCS t DZO Hi-Z t CLZ Hi-Z t DZO MITSUBISHI LSIs ...

Page 11

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t CSH t RCD t RAD t t RAH CAH t ASC ROW COLUMN ADDRESS ADDRESS t AWD t CWD t RCS ...

Page 12

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t RAH ROW Hi-Z MITSUBISHI LSIs RPC t t CRP ASR ROW ADDRESS ...

Page 13

... OFF ~ (OUTPUTS OEZ t ODD M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM RAS RPC CSR t CSR CHR MITSUBISHI LSIs RAS CRP RPC ...

Page 14

... IL Note 30: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle. Timing requirements and output state are the same as that of each cycle described above. 14 M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RC ...

Page 15

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t CSH RCD CAS t RAD t t ASC t RAH CAH COLUMN ADDRESS1 t t RCH RCS t DZC ...

Page 16

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t CSH t t CAS RCD ASC RAH CAH ROW COLUMN ADDRESS1 t t WCS WCH ...

Page 17

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RAS t CSH t t RCD CAS t ASC t t RAH CAH COLUMN ADDRESS1 t RCS t WCH t DZC t DS ...

Page 18

... ~ (INPUTS ~ (OUTPUTS M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t CSH t t RCD CAS t RAD t t CAH RAH t ASC ROW COLUMN ADDRESS1 t AWD t RCS t CWD ...

Page 19

... OFF ~ (OUTPUTS OEZ t ODD M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM t RASS t CSR MITSUBISHI LSIs t RPS t RPC t t CRP CHS t ASR ROW ADDRESS Hi-Z COLUMN ADDRESS t RCS ...

Page 20

... The time interval from the falling edge of RAS signal in the last CBR refresh cycle during read/write operation period to the falling edge of RAS signal at the start of self refresh operation should be set within t (shown in table 2). NSD 20 M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Self Refresh Cycle t t NSD ...

Page 21

... RAS signal at the SNB end of self refresh operation to the falling edge of RAS signal in the last CBR refresh cycle during read/write operation period should be set within 16.4ms. M5M44800CJ,TP-5,-5S:Under development M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM Self Refresh t ...

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