M5M44265CJ-6 Mitsumi Electronics, Corp., M5M44265CJ-6 Datasheet

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M5M44265CJ-6

Manufacturer Part Number
M5M44265CJ-6
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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M5M44265CJ-6
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M5M44265CJ-6S
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1
DESCRIPTION
Microcomputer memory, Refresh memory for CRT, Frame Buffer
memory for CRT
This is a family of 262144-word by 16-bit dynamic RAMs with
Hyper Page mode fuction, fabricated with the high performance
CMOS process, and is ideal for the buffer memory systems of
personal computer graphics and HDD where high speed, low
power dissipation, and low costs are essential.
single-transistor dynamic storage stacked capacitor cell provide
high circuit density at reduced costs. Multiplexed address inputs
permit both a reduction in pins and an increase in system
densities. Self or extended refresh current is low enough for
battery back-up application.
512 cycles every 8.2ms.
FEATURES
PIN DESCRIPTION
XX=J,TP
APPLICATION
This device has 2CAS and 1W terminals with a refresh cycle of
Standard 40pin SOJ, 44 pin TSOP (II)
Single 5V±10% supply
Low stand-by power dissipation
Operating power dissipation
Self refresh capability*
Extended refresh capability
Hyper-page mode (512-column random access), Read-modify-
write, RAS-only refresh, CAS before RAS refresh, Hidden refresh
capabilities.
Early-write mode, OE and W to control output buffer impedance
512 refresh cycles every 8.2ms (A
512 refresh cycles every 128ms (A
Byte or word control for Read/Write operation (2CAS, 1W type)
*
M5M44265CXX-5,-5S
M5M44265CXX-6,-6S
M5M44265CXX-7,-7S
UCAS
DQ
RAS
LCAS
W
OE
V
The use of double-layer metalization process technology and a
A
V
Pin name
: Applicable to self refresh version (M5M44265CJ,TP-5S,-6S,-7S
CC
0
SS
Type name
CMOS Input level
CMOS Input level
M5M44265Cxx-5,-5S
M5M44265Cxx-6,-6S
M5M44265Cxx-7,-7S
Self refresh current
Extended refresh current
: option) only
~A
1
~DQ
8
16
Address inputs
Data inputs / outputs
Row address strobe input
Lower byte control
column address strobe input
Write control input
Output enable input
Power supply (+5V)
Ground (0V)
Upper byte control
column address strobe input
(max.ns)
access
RAS
time
70
50
60
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
Function
(max.ns)
access
EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
CAS
time
13
15
20
0
(max.ns)
0
Address
~A
access
~A
time
25
30
35
8
8
)
)*
(max.ns)
access
time
13
15
20
OE
(min.ns)
Cycle
130
110
550µW (Max)*
time
5.5mW (Max)
688mW (Max)
605mW (Max)
523mW (Max)
90
150µA (Max)
150µA (Max)
M5M44265CJ,TP-5,-6,-7,
(typ.mW)
dissipa-
Power
625
550
475
tion
M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S
PIN CONFIGURATION (TOP VIEW)
Outline 44P3W-R (400mil TSOP Nomal Bend)
(5V)V
(5V)V
(5V)V
(5V)V
(5V)V
(5V)V
RAS
DQ4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
RAS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
Outline 40P0K (400mil SOJ)
NC
NC
NC
NC
NC
NC
CC
CC
CC
CC
CC
CC
A
A
A
A
W
A
A
A
A
W
1
2
3
4
5
6
7
8
0
1
2
3
1
2
3
5
6
7
8
0
1
2
3
10
11
12
13
14
15
16
17
18
19
20
10
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
-5S,-6S,-7S
MITSUBISHI LSIs
40
39
38
37
36
35
34
33
32
31
30
28
27
26
25
24
23
22
21
44
43
42
41
40
39
38
37
36
35
32
29
28
27
26
25
24
23
MITSUBISHI LSIs
29
31
30
NC: NO CONNECTION
V
V
V
DQ
DQ
DQ
DQ
V
DQ
DQ
DQ
DQ
NC
LCAS
UCAS
OE
A
A
A
A
A
V
V
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
NC
LCAS
UCAS
OE
A
A
A
A
A
SS
SS
SS
SS
8
7
6
5
4
SS
SS
8
7
6
5
4
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
(0V)
(0V)
(0V)
(0V)
(0V)
(0V)

Related parts for M5M44265CJ-6

M5M44265CJ-6 Summary of contents

Page 1

... Early-write mode, OE and W to control output buffer impedance 512 refresh cycles every 8.2ms (A 512 refresh cycles every 128ms (A Byte or word control for Read/Write operation (2CAS, 1W type Applicable to self refresh version (M5M44265CJ,TP-5S,-6S,-7S : option) only APPLICATION Microcomputer memory, Refresh memory for CRT, Frame Buffer memory for CRT ...

Page 2

... EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM FUNCTION In addition to Hyper page mode, normal read, write and read- modify-write operations the M5M44265CJ, TP provides a number of Table 1 Input conditions for each mode Operation Lower byte read Upper byte read Word read Lower byte write ...

Page 3

... CC1 (AV) CC3 (AV) CC4 (AV) Note 4: I and I are dependent on output loading. Specified values are obtained with the output open. CC1 (AV) CC4 (AV) 3 Note 5: Column Address can be changed once or less while RAS=V M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S With respect to V Ta=25 C (Ta=0~70˚C, unless otherwise noted) Limits Nom Min 4.5 5 2.4 -0 ...

Page 4

... OEZ (max) WEZ(max) OFF(max) reference OH(min) OL(max) 13: Output is disabled after both RAS and CAS go to high. 4 M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S =5V±10%, V =0V, unless otherwise noted) SS Test conditions f=1MHz V =25mVrms I (Ta=0~70˚C, V =5V±10%, V =0V, unless otherwise noted, see notes 6,14,15) ...

Page 5

... Column address to CAS hold time CAL t RAS hold time after OE low ORH t CAS hold time after OE low OCH t t Note 22: Either or must be satisfied for a read cycle. RCH RRH 5 M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S Parameter M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S (Note 16) (Note 17) (Note 18) (Note 19) (Note 19) (Note 20) (Note 20) (Note 20) (Note 21) t =2ns ...

Page 6

... Hyper page mode cycle only), the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) of the DQ (at access time and until CAS or OE goes back M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S Parameter (Note 24) ...

Page 7

... Symbol t CBR self refresh RAS low pulse width RASS t CBR self refresh RAS high precharge time RPS t CBR self refresh CAS hold time CHS 7 M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S Parameter Min (Note 26) (Note 27) (Note 28) (Note 24) (Note 29) M5M44265C-5,-5S M5M44265C-6,-6S M5M44265C-7,-7S Parameter Min ...

Page 8

... ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t RCD t RAD t RAH t t ASC CAH ROW COLUMN ADDRESS t RCS t DZC t CAC CLZ Hi-Z t RAC t DZO Indicates the don't care input. Note 31 ...

Page 9

... ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t RAD t RAH t t ASC CAH ROW COLUMN ADDRESS t RCS t DZC t CAC CLZ Hi-Z t RAC t DZO MITSUBISHI LSIs t RC ...

Page 10

... ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t t RAH CAH t ASC ROW COLUMN ADDRESS t t WCS t DS DATA VALID RPC t RSH t CAS WCH t DH Hi-Z MITSUBISHI LSIs ...

Page 11

... ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t t RAH CAH t ASC COLUMN ROW ADDRESS t WCS t Hi DATA VALID Hi-Z MITSUBISHI LSIs RPC t RSH t CAS WCH ...

Page 12

... ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t RAH t ASC ROW COLUMN ADDRESS ADDRESS t RCS t DZC Hi-Z t CLZ Hi-Z t DZO MITSUBISHI LSIs RPC t RSH t CAS t CAH t CWL ...

Page 13

... V (OUTPUTS ~ ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t RAH t ASC ROW COLUMN ADDRESS ADDRESS t RCS Hi-Z t DZC Hi-Z t CLZ Hi DZO MITSUBISHI LSIs RPC t RSH t CAS t CAH ...

Page 14

... ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t RAD t t RAH CAH t ASC COLUMN ROW ADDRESS ADDRESS t AWD t CWD t RCS t RWD t DZC Hi-Z t CAC CLZ Hi-Z VALID ...

Page 15

... V (OUTPUTS ~ ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t RCD t RAD t t CAH RAH t ASC ROW COLUMN ADDRESS ADDRESS t AWD t CWD t RCS t RWD Hi-Z t DZC Hi-Z t CAC CLZ Hi-Z ...

Page 16

... ROW ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t CSH t t RCD t CAS CP t RAD CAH RAH t ASC COLUMN-1 t RCS t CAL t DZC t CAC CLZ Hi-Z DATA VALID-1 t RAC t ...

Page 17

... V (OUTPUTS ~ ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,- CSH t t RCD CP t CAS t RAD t ASC t t RAH CAH t ASC COLUMN-1 t RCS t CAL t DZC Hi-Z t DZC t CAC CLZ Hi-Z t ...

Page 18

... ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,- CSH RCD CAS ASC t RAH ASC CAH COLUMN WCS WCH WCS DATA VALID-1 MITSUBISHI LSIs RAS ...

Page 19

... ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t CSH RCD CAS ASC t RAH CAH t ASC COLUMN WCS WCS WCH DATA VALID-1 t RAS t t HPC RSH ...

Page 20

... ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t CSH t t CAS RCD t RAD t t RAH CAH t ASC ROW COLUMN-1 t AWD t t CWD RCS t RWD DZC Hi-Z t CAC CLZ ...

Page 21

... ( (INPUTS ~ ( (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t CSH t t CAS RCD t RAD t t RAH CAH t ASC ROW COLUMN-1 t AWD t t CWD RCS t RWD t t DZC DS Hi-Z t CAC CLZ ...

Page 22

... ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t CSH RCD CAS CP t RAD ASC RAH CAH t ASC COLUMN-1 COLUMN RCS WCS t CAL t DZC CAC ...

Page 23

... ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,- CAS t ASC t CAH COLUMN CAL RCH t HCWD t HAWD t HPWD Hi-Z t CAC CPA WEZ DATA VALID-1 t HCOD t OEZ t HAOD ...

Page 24

... ROW ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH t t RCD CAS t RAD CAH RAH t ASC COLUMN-1 t RCS t DZC t CAC CLZ Hi-Z DATA VALID-1 t RAC t OEZ t ...

Page 25

... ROW ADDRESS ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t CSH RCD CAS t RAD CAH RAH t ASC COLUMN-1 t RCS t DZC t CAC CLZ Hi-Z DATA VALID-1 t RAC t t OEA ...

Page 26

... V IH RAS CRP V IH LCAS/UCAS ASR ~ (INPUTS ~ (OUTPUTS M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RAS t RAH ROW ADDRESS MITSUBISHI LSIs RPC Hi CRP t ASR ROW ADDRESS ...

Page 27

... ~ (INPUTS REZ t OHR t OFF t OHC ~ (OUTPUTS OEZ M5M44265CJ,TP-5,-6,-7,-5S,-6S,- RAS t RPC t CSR t CHR RAS CSR t RPC CHR Hi-Z MITSUBISHI LSIs t CRP t ASR ROW COLUMN ADDRESS ADDRESS t RCS ...

Page 28

... (INPUTS ~ (OUTPUTS Note 32: Early write, delayed write, read write or read modify write cycle is applicable instead of read cycle. 28 M5M44265CJ,TP-5,-6,-7,-5S,-6S,- RAS t t RCD RSH t RAD RAH CAH ASC ROW COLUMN ADDRESS t RCS t ...

Page 29

... RRH t RCH RDD t CDD V DQ ~ (INPUTS REZ t OHR t OFF t OHC ~ (OUTPUTS OEZ t ODD M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S t RASS t CSR MITSUBISHI LSIs t RPS t RPC t CRP t CHS t ASR ROW ADDRESS Hi-Z t RCS ...

Page 30

... The time interval from the falling edge of RAS signal in the last CBR refresh cycle during read/write operation period to the falling edge of RAS signal at the start of self refresh operation should be set within t (shown in table 2). NSD 30 M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S Self Refresh Cycle t µ 100 s t RASS ...

Page 31

... Switching from self refresh operation to read/write operation. The time interval t from the rising edge of RAS signal at SNB the end of self refresh operation to the falling edge of RAS signal in the last CBR refresh cycle during read/write operation period should be set within 8.2 ms. 31 M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S Self Refresh t µ 100 s t RASS ...

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