IRF7338 International Rectifier Corp., IRF7338 Datasheet

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IRF7338

Manufacturer Part Number
IRF7338
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7338
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7338PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7338TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7338TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7338TRPBF
Quantity:
15 994
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Thermal Resistance
www.irf.com
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Description
Symbol
R
R
V
I
I
I
P
P
V
D
D
DM
T
DS
D
D
GS
θJL
θJA
J,
@ T
@ T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
N-Channel
±12 „
6.3
5.2
12
26
Typ.
–––
–––
HEXFET
8
7
6
5
-55 to + 150
D1
D1
D2
Max.
D2
2.0
1.3
16
R
V
®
DS(on)
DSS
IRF7338
Power MOSFET
P-Channel
Max.
62.5
20
0.034Ω 0.150Ω
-3.0
-2.5
-12
-13
N-Ch
12V
± 8.0
SO-8
PD - 94372C
P-Ch
-12V
Units
°C/W
mW/°C
°C
W
V
1
6/2/03

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IRF7338 Summary of contents

Page 1

... N-CHANNEL MOSFET P-CHANNEL MOSFET Top View N-Channel 12 @ 4.5V 6 4.5V 5 ±12 „ Typ. ––– ƒ ––– 94372C IRF7338 ® HEXFET Power MOSFET N-Ch P- 12V -12V DSS 0.034Ω 0.150Ω DS(on) SO-8 Max. P-Channel -12 -3.0 -2 ...

Page 2

... IRF7338 Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... 10V 20µs PULSE WIDTH 1 1.0 2 Gate-to-Source Voltage (V) www.irf.com 100 VGS TOP 7.5V TOP 7.5V 4.5V 4.5V 4.0V 4.0V 3.5V 3.5V 3.0V 3.0V 2.7V 2.7V 2.0V 2.0V 10 BOTTOM 1.5V BOTTOM 1.5V 1 0 Drain-to-Source Voltage (V) 100.0 10 150°C 1.0 0.1 3.0 4.0 0.4 IRF7338 VGS 1.5V 20µs PULSE WIDTH Tj = 150° 150° 25° 0.6 0.8 1.0 1 Source-toDrain Voltage (V) 10 1.4 3 ...

Page 4

... IRF7338 2 6.3A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.05 0.04 0. 6.3A 0.02 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) 4 0.12 0.10 0.08 0.06 0.04 0. 4.5V GS 0.00 80 100 120 140 160 0 ° 0.00 7 Drain Current (A) 0.00 0.00 0.01 0.10 1.00 Time (sec) Typical Power Vs. Time www.irf.com 30 10.00 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 www.irf.com MHZ 6. 0.0 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7338 12V 2.0 4.0 6.0 8.0 10.0 12 Total Gate Charge (nC Notes: 1. Duty factor Peak thJA A 0 ...

Page 6

... IRF7338 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 T , Case Temperature C Fig 12. Maximum Drain Current Vs. Case Temperature Charge Fig 14a. Basic Gate Charge Waveform 6 Fig 13a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 13b. Switching Time Waveforms 12V V GS Fig 14b ...

Page 7

... 25° 150° -10V 20µs PULSE WIDTH 1 1.0 2 Gate-to-Source Voltage (V) www.irf.com 100 TOP 10 BOTTOM -1.5V -1.5V 1 0.1 10 0.1 100.0 10 150°C 1.0 0.1 3.0 4.0 0.4 IRF7338 VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V -1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 25° 0.6 0.8 1.0 1.2 1 Source-toDrain Voltage (V) 10 1.6 7 ...

Page 8

... IRF7338 2.0 -3. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature J 0.12 0.10 0. -3.0A 0.06 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) 8 0.20 0.18 0.16 0.14 0.12 0.10 0. -4.5V GS 0.06 80 100 120 140 160 0 ° 6.0 7.0 8.0 0. -2. -4. Drain Current (A) 0.00 0.00 0.01 0.10 1.00 Time (sec) www.irf.com 14 10.00 ...

Page 9

... SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 0.0001 www.irf.com MHZ -2. 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7338 -9.6V VDS= -6. Total Gate Charge (nC Notes: 1. Duty factor Peak ...

Page 10

... IRF7338 3.0 2.4 1.8 1.2 0.6 0 100 T , Case Temperature C Fig 26. Maximum Drain Current Vs. Case Temperature Charge Fig 28a. Basic Gate Charge Waveform 10 Fig 27a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 27b. Switching Time Waveforms Current Regulator Same Type as D ...

Page 11

... RECT IFIER LOGO www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW LAS T DIGIT YEAR WW = WEEK YWW XXXX LOT CODE F7101 PART NUMBER IRF7338 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c ...

Page 12

... IRF7338 SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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